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IRF540SPBF

N-MOSFET with a peak current rating of 110A and power dissipation up to 150W

Quantity Unit Price(USD) Ext. Price
1 $1.228 $1.23
10 $1.041 $10.41
50 $0.941 $47.05
100 $0.826 $82.60
500 $0.774 $387.00
1000 $0.751 $751.00

Inventory:7,505

*The price is for reference only.
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Overview of IRF540SPBF

The IRF540SPBF is an N-Channel MOSFET transistor designed for use in a wide range of high-power switching applications. It is capable of handling high-frequency and high-voltage operations, making it suitable for power management and amplification in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the state of the transistor
  • Drain (D): Power terminal where the load is connected

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF540SPBF MOSFET for a visual representation.

Key Features

  • High Power Handling: Capable of handling high-power applications with low conduction losses.
  • High Frequency Operation: Suitable for high-frequency switching operations in power electronics.
  • Low On-Resistance: Provides efficient power management with minimal voltage drop.
  • Enhanced Thermal Performance: Designed with features to improve thermal dissipation and stability.
  • Robust Construction: Built to withstand high voltage and current stresses in demanding environments.

Note: For detailed technical specifications, please refer to the IRF540SPBF datasheet.

Application

  • Switching Power Supplies: Ideal for use in high-power switching supplies and converters.
  • Motor Control: Suitable for motor drive and control applications requiring high-power handling.
  • Audio Amplifiers: Used in audio amplifier circuits for power amplification and switching.

Functionality

The IRF540SPBF N-Channel MOSFET provides efficient and reliable switching and amplification capabilities for high-power electronic circuits, contributing to effective power management and control.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate (G) terminal to control the switching state.
  • Load Connection: Connect the load to the Drain (D) terminal while ensuring proper thermal management.
  • Ground Connection: Connect the Source (S) terminal to the ground reference of the circuit.

Frequently Asked Questions

Q: Is the IRF540SPBF suitable for audio amplifier applications?
A: Yes, the IRF540SPBF can be used in audio amplifier circuits to manage high-power amplification and switching functions effectively.

Equivalent

For similar functionalities, consider these alternatives to the IRF540SPBF:

  • IRF640: An N-Channel MOSFET transistor with comparable power handling and frequency characteristics.
  • IRF520: This MOSFET offers similar power management capabilities and is suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 28 A
Rds On - Drain-Source Resistance 77 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 72 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 150 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Height 4.83 mm
Length 10.67 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Width 9.65 mm Unit Weight 0.139332 oz

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