IRF3805SPBF
INFINEON - IRF3805SPBF - N CHANNEL MOSFET, 55V, 75A, D2-PAK
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Part Number : IRF3805SPBF
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Package/Case : TO252-3
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRF3805SPBF DataSheet (PDF)
The IRF3805SPBF is an N-channel power MOSFET designed for high power switching applications. This MOSFET features a low on-state resistance and high current capability, making it suitable for power management in various electronic systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRF3805SPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRF3805SPBF datasheet. Functionality The IRF3805SPBF N-channel MOSFET is designed to control high power levels efficiently in various electronic systems. It offers low on-state resistance and high current handling capability for optimal power management. Usage Guide Q: What is the maximum power dissipation of the IRF3805SPBF? Q: Is the IRF3805SPBF suitable for automotive applications? For similar functionalities, consider these alternatives to the IRF3805SPBF:Overview of IRF3805SPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF3805SPBF can dissipate up to a maximum of X watts under specified conditions.
A: Yes, the IRF3805SPBF is commonly used in automotive systems for power management and control applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 220 A | Rds On - Drain-Source Resistance | 3.3 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 190 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 130 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 93 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 150 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | Automotive MOSFET | Typical Turn-Off Delay Time | 87 ns |
Typical Turn-On Delay Time | 20 ns | Width | 6.22 mm |
Part # Aliases | SP001551078 | Unit Weight | 0.011640 oz |
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