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IRF1312S

80V N-channel D2PAK MOSFET with 95A current rating

Inventory:8,224

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Overview of IRF1312S

In summary, the IRF1312S MOSFET offers a winning combination of high current capacity, low on-resistance, and reliable performance in a compact package. With its impressive power dissipation rating and voltage handling capabilities, this MOSFET is sure to meet the demands of even the most challenging applications. Trust the IRF1312S MOSFET to deliver superior performance and reliability in your next design project

Key Features

  • Advanced radiation hardness
  • Low-power consumption
  • Fast-recovery performance

Application

  • Class D audio amplifier
  • Welding machine power
  • UPS power systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Obsolete
Automotive No PPAP No
Category Power MOSFET Configuration Single
Process Technology HEXFET Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 80 Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 95 Maximum Drain Source Resistance (MOhm) 10@10V
Typical Gate Charge @ Vgs (nC) 93@10V Typical Gate Charge @ 10V (nC) 93
Typical Input Capacitance @ Vds (pF) 5450@25V Maximum Power Dissipation (mW) 3800
Typical Fall Time (ns) 51 Typical Rise Time (ns) 130
Typical Turn-Off Delay Time (ns) 47 Typical Turn-On Delay Time (ns) 25
Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 175
Mounting Surface Mount Package Height 4.83(Max)
Package Width 9.65(Max) Package Length 10.67(Max)
PCB changed 2 Tab Tab
Standard Package Name TO-263 Supplier Package D2PAK
Pin Count 3 Lead Shape Gull-wing

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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