IPI45N06S4L08AKSA3
Trans MOSFET N-CH 60V 45A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube
Inventory:4,908
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IPI45N06S4L08AKSA3
-
Package/Case : PG-TO262-3
-
Brand : Infineon
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IPI45N06S4L08AKSA3 DataSheet (PDF)
-
Series : IPI45N06S4L-08
Overview of IPI45N06S4L08AKSA3
The IPI45N06S4L08AKSA3 is a high-quality N-channel MOSFET specifically designed for automotive applications. Its AEC-Q101 qualification ensures that it meets the stringent reliability and performance requirements of the automotive industry, making it an ideal choice for automotive designers
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
functionalPacking | TUBE | addProductInfo | KUL / KUL with Imide |
packageNameMarketing | I2PAK | msl | NA |
halogenFree | yes | customerInfo | STANDARD |
fgr | C78 | productClassification | COM |
productStatusInfo | discontinued | hfgr | H |
packageName | PG-TO262-3 | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001067956 |
nearestEquivalent | IPI80N06S4-07 | fourBlockPackageName | PG-TO262-3-1 |
rohsCompliant | yes | opn | IPI45N06S4L08AKSA3 |
docuNoCancellation | PD_231_19 | completelyPbFree | no |
sapMatnrSali | SP001067956 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![TIP102](/files/uploads/product/s/ef41b4d085134abea72d6611670dbc40.webp)
TIP102
Robust TO-220 package provides exceptional thermal management and shock resistance
![IPW65R080CFD](/files/uploads/product/s/ec4770d2cc4f4ab6b86b0923f793d9af.webp)
IPW65R080CFD
Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor
![IPB019N08N3G](/files/uploads/product/s/0aa440f573ef43488259e9746ed71b38.webp)
IPB019N08N3G
Low-on-resistance transistor for high-frequency operation and efficiency
![IPD060N03LG](/files/uploads/product/s/380d7a06aa464df0959c44fc925b20d0.webp)
IPD060N03LG
IPD060N03LG is a N-channel power MOSFET with a maximum voltage rating of 30V and a current rating of 50A
![IPB072N15N3G](/files/uploads/product/s/261d523ab2594f9fafad664ac7ac32c7.webp)
IPB072N15N3G
7.2mΩ at 10V, 100A and 4V at 270uA
![IPD031N06L3G](/files/uploads/product/s/a08318e557f34ece9fcaf4bf8b7114b8.webp)
IPD031N06L3G
Power MOSFET with 60V voltage capacity and 100A current handling
![FF1800R17IP5](/img/package/module.jpg)
FF1800R17IP5
High-power insulated gate bipolar transistor (IGBT) modules
![IPA60R180P7SXKSA1](/img/package/llp.jpg)
IPA60R180P7SXKSA1
TO-220FP 3-pin package for easy mounting
![IPB073N15N5ATMA1](/img/package/d2pak.jpg)
IPB073N15N5ATMA1
This device is an N-Channel MOSFET designed to handle voltages up to 150 volts and currents up to 114 amperes at a continuous basis
![IPB107N20N3GATMA1](/img/package/d2pak.jpg)
IPB107N20N3GATMA1
N-Channel MOSFET suitable for high power applications with a 200V rating
![PN2222ATA](/img/package/to92.jpg)
PN2222ATA
3-Pin TO-92 Package NPN General Purpose Bipolar Transistor, Capable of Handling 40V Voltage and 1A Current
![IRF9388TRPBF](/img/package/so8.jpg)
IRF9388TRPBF
The MOSFET model IRF9388TRPBF is specifically designed for P-channel operation
![SIA461DJ-T1-GE3](/img/package/sc70.jpg)
SIA461DJ-T1-GE3
D-Source P-Type Transistor
![PD54008TR-E](/img/package/power33.jpg)
PD54008TR-E
Trans RF MOSFET N-CH 25V 5A 3-Pin PowerSO-10RF (Formed lead) T/R
![BC857BTT1G](/img/package/sc75.jpg)
BC857BTT1G
Small Signal Bipolar Transistor, 0.1A Collector Current, 45V Breakdown Voltage, PNP Type
![SI2338DS-T1-GE3](/img/package/sot23.jpg)
SI2338DS-T1-GE3
Vishay Si2338DS-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 3-Pin SOT-23
![MJD32CTF](/img/package/dpak.jpg)
MJD32CTF
MJD32CTF is a 3.0 A, 100 V PNP Bipolar Power Transistor
![CA3096E](/img/package/pdip16.jpg)
CA3096E
Description of CA3096E Bipolar Transistors
![FJI5603DTU](/img/package/d2pak3.jpg)
FJI5603DTU
ON Semiconductor, FJI5603DTU NPN Digital Transistor, 3 A 800 V, Single, 3 + Tab-Pin TO-262
![IRFU024NPBF](/img/package/ipak.jpg)
IRFU024NPBF
45W maximum power dissipation at a case temperature of 25°C