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IPG20N10S4L35ATMA1

N-channel MOSFET with excellent ruggedness and thermal performance, designed for harsh automotive environment

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Overview of IPG20N10S4L35ATMA1

Mosfet Array 100V 20A 43W Surface Mount PG-TDSON-8-4

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IPG20N10 Product Status Active
Technology Si Configuration Dual
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16µA Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V Power - Max 43W
Operating Temperature -55°C ~ 175°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Package / Case TDSON-8 Supplier Device Package PG-TDSON-8-4
Base Product Number IPG20N Manufacturer Infineon
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 29 mOhms, 29 mOhms
Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 17.4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 43 W
Channel Mode Enhancement Brand Infineon Technologies
Fall Time 13 ns, 13 ns Height 1.27 mm
Length 5.9 mm Product Type MOSFET
Rise Time 2 ns, 2 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 18 ns, 18 ns Typical Turn-On Delay Time 3 ns, 3 ns
Width 5.15 mm Part # Aliases IPG20N10S4L-35 SP000859022
Unit Weight 0.003411 oz

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