IPG20N06S4L26ATMA1

Name: IPG20N06S4L26ATMA1
Brand: Infineon
Rating: 4.5 (10 reviews)

0a continuous drain current and 60v source voltage

Inventory:7,487

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Part Number : IPG20N06S4L26ATMA1
Package/Case : TDSON-8
Brand : INFINEON
Components Classification : FET, MOSFET Arrays
Datesheet : IPG20N06S4L26ATMA1 DataSheet (PDF)
Series : IPG20N06S4L-26

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Overview of IPG20N06S4L26ATMA1

The IPG20N06S4L26ATMA1 is a high-performance dual N-channel MOSFET transistor designed for automotive applications. With a drain source voltage of 60V and a continuous drain current of 20A, this transistor offers robust power handling capabilities. Its low on-resistance of 0.021ohm and threshold voltage of 1.7V ensure efficient power management and reliable operation. Housed in a TDSON-8 case style with 8 pins, this transistor is easy to integrate into automotive systems. With a maximum operating temperature of 175°C, it can withstand harsh automotive environments. This product is AEC-Q101 qualified, guaranteeing its performance and reliability in automotive use. With a power dissipation of 33W, this transistor is capable of handling high-power applications with ease. Its MSL 1 - Unlimited rating and absence of SVHC (Substances of Very High Concern) make it suitable for a wide range of manufacturing environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer	Infineon	Product Category	MOSFET
RoHS	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	TDSON-8
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	21 mOhms, 21 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	20 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	33 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Tradename	OptiMOS
Series	OptiMOS-T2	Brand	Infineon Technologies
Configuration	Dual	Fall Time	10 ns, 10 ns
Height	1.27 mm	Length	5.9 mm
Product Type	MOSFET	Rise Time	1.5 ns, 1.5 ns
Factory Pack Quantity	5000	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Typical Turn-Off Delay Time	18 ns, 18 ns
Typical Turn-On Delay Time	5 ns, 5 ns	Width	5.15 mm
Part # Aliases	IPG20N06S4L-26 SP000705588	Unit Weight	0.003527 oz

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