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IHW30N160R2

600V, 60A current

Inventory:9,692

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Overview of IHW30N160R2

The IHW30N160R2 is a 30A, 1600V IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. It features a rugged design for reliable performance in industrial and automotive systems, offering efficient switching and conduction characteristics.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): High-power terminal
  • Emitter (E): Low-power terminal
  • G: Gate terminal for controlling the IGBT
  • VCE(sat): Collector-Emitter saturation voltage
  • IC: Collector current
  • VGE: Gate-Emitter voltage
  • VCE: Collector-Emitter voltage
  • RG: Gate resistance
  • E: Internal equivalent circuit connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IHW30N160R2 IGBT for a visual representation.

Key Features

  • High Current and Voltage Rating: Capable of handling up to 30A and 1600V for demanding power applications.
  • Fast Switching Speed: Offers fast turn-on and turn-off times for efficient power control.
  • Low Saturation Voltage: The IHW30N160R2 exhibits low VCE(sat) values for minimal power loss during conduction.
  • Rugged Design: Built to withstand high-power industrial environments with robust construction.
  • Wide Operating Temperature Range: Suitable for operation in a variety of temperature conditions.

Note: For detailed technical specifications, please refer to the IHW30N160R2 datasheet.

Application

  • Motor Drives: Ideal for use in motor control applications requiring high-power switching.
  • Power Inverters: Suitable for power inverter systems in industrial and automotive sectors.
  • UPS Systems: Used in uninterruptible power supply systems for efficient power management.

Functionality

The IHW30N160R2 IGBT is designed to provide reliable and efficient high-power switching for a wide range of applications, ensuring optimal performance in demanding environments.

Usage Guide

  • Connection: Connect the collector, emitter, and gate terminals according to the application circuit requirements.
  • Voltage Ratings: Ensure the applied voltages do not exceed the maximum ratings specified in the datasheet.
  • Heat Management: Implement proper heat sinking to maintain the IGBT within its operating temperature range.

Frequently Asked Questions

Q: What is the maximum current rating of the IHW30N160R2 IGBT?
A: The IHW30N160R2 is rated for a maximum current of 30A for efficient power handling.

Q: Can the IHW30N160R2 be used in automotive applications?
A: Yes, the IHW30N160R2 is designed for high-power switching applications, making it suitable for automotive systems requiring robust performance.

Equivalent

For similar functionalities, consider these alternatives to the IHW30N160R2:

  • IRGP50B60PD1: A high-current IGBT with similar power handling capabilities and rugged design.
  • FGH40N60SFD: This IGBT offers fast switching speeds and high voltage ratings for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.6 kV Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 312 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Series 600V TRENCHSTOP
Brand Infineon Technologies Gate-Emitter Leakage Current 100 nA
Height 20.95 mm Length 15.9 mm
Product Type IGBT Transistors Factory Pack Quantity 240
Subcategory IGBTs Tradename TRENCHSTOP
Width 5.3 mm Part # Aliases SP000273701 IHW3N16R2XK IHW30N160R2FKSA1
Unit Weight 1.340411 oz

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