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IAUC90N10S5N062ATMA1

High-capacity N-channel transistor designed for use in automotive electronic systems, capable of handling up to 100V and 90A of current flow

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Overview of IAUC90N10S5N062ATMA1

N-Channel 100 V 90A (Tc) 115W (Tc) Surface Mount PG-TDSON-8-34

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IAUC90N10 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 3.8V @ 59µA Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3275 pF @ 50 V
Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-34
Package / Case TDSON-8 Base Product Number IAUC90
Manufacturer Infineon Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 90 A
Rds On - Drain-Source Resistance 6.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 36 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 115 W Channel Mode Enhancement
Brand Infineon Technologies Fall Time 2 ns
Product Type MOSFET Rise Time 2 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 6 ns Part # Aliases IAUC90N10S5N062 SP001468520
Unit Weight 0.003683 oz

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