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GAN063-650WSAQ

High voltage MOSFET suitable for various power applications

Inventory:9,469

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  • 365 Days Quality Guarantee
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Overview of GAN063-650WSAQ

The GAN063-650WSA is a cutting-edge 650 V, 50 mΩ Gallium Nitride (GaN) FET that represents the pinnacle of technological advancement in the field. By seamlessly combining Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, this device offers unparalleled reliability and performance that is unmatched in the industry. With its normally-off configuration, the GAN063-650WSA provides users with a level of convenience and peace of mind that is simply unparalleled

Key Features

  • Excellent surge withstand capability
  • Compact package with good thermal dissipation
  • Low input capacitance and output impedance

Application

  • High-performance drives
  • Data communication power
  • Reliable UPS systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
Power Dissipation (Max) 143W (Ta) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-247-3
Package / Case TO-247-3 Base Product Number GAN063

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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