• FGH80N60FDTU TO-247-3
FGH80N60FDTU TO-247-3

FGH80N60FDTU

Product FGH80N60FDTU: N-channel 600V 80A Trans IGBT Chip, TO-247 Package, 290W Power Dissipation

Quantity Unit Price(USD) Ext. Price
1 $5.969 $5.97
10 $5.845 $58.45
30 $5.764 $172.92
100 $5.680 $568.00

Inventory:5,536

*The price is for reference only.
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Overview of FGH80N60FDTU

The FGH80N60FDTU is a high-power N-channel IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high current and voltage handling capabilities. This IGBT offers efficient power switching and is suitable for use in various power electronic systems.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • C: Collector
  • E: Emitter
  • G: Gate
  • VCE: Collector-Emitter Voltage
  • VGE: Gate-Emitter Voltage
  • IC: Collector Current
  • IG: Gate Current
  • PG: Power Dissipation
  • TJ: Junction Temperature
  • TSTG: Storage Temperature

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FGH80N60FDTU IGBT for a visual representation.

Key Features

  • High Power Handling Capability:The FGH80N60FDTU can handle high currents and voltages, making it suitable for high-power applications.
  • Efficient Power Switching:This IGBT offers efficient power switching characteristics, minimizing power losses during operation.
  • Low Saturation Voltage:With low saturation voltage, the FGH80N60FDTU ensures minimal conduction losses.
  • Fast Switching Speed:This IGBT provides fast switching speeds, enabling rapid switching transitions in power circuits.
  • High Reliability:The FGH80N60FDTU is designed for high reliability and robust performance in demanding operating conditions.

Note:For detailed technical specifications, please refer to the FGH80N60FDTU datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC to AC power.
  • Motor Drives: Suitable for motor drive applications requiring high-power switching.
  • Industrial Automation: Used in industrial automation systems for efficient power control.

Functionality

The FGH80N60FDTU N-channel IGBT offers high power handling capabilities and efficient power switching for various power electronic applications, ensuring reliable and effective operation.

Usage Guide

  • Power Connections: Connect the Collector (C), Emitter (E), and Gate (G) pins to the appropriate power supply and control signals.
  • Gating Control: Apply the Gate-Emitter Voltage (VGE) to control the switching behavior of the IGBT.
  • Thermal Management: Ensure proper thermal dissipation to maintain optimal junction temperature (TJ) for reliable operation.

Frequently Asked Questions

Q: Can the FGH80N60FDTU be paralleled for higher current requirements?
A: Yes, the FGH80N60FDTU can be paralleled to achieve higher current handling capabilities in power applications.

Equivalent

For similar functionalities, consider these alternatives to the FGH80N60FDTU:

  • IXGH50N60C2D1: This IGBT offers comparable power handling capabilities and switching characteristics for high-power applications.
  • IRG7PH42UD1PBF: A high-performance IGBT with similar voltage and current ratings suitable for power electronic systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type TO-247-3 Case Outline 340CK
MSL Type NA MSL Temp (°C) 0
Container Type TUBE Container Qty. 450
ON Target N V(BR)CES Typ (V) 600
IC Max (A) 40 VCE(sat) Typ (V) 1.8
VF Typ (V) 2.3 Eoff Typ (mJ) 0.52
Eon Typ (mJ) 1 Trr Typ (ns) 105
Irr Typ (A) 2.6 Gate Charge Typ (nC) 120
PD Max (W) 290 Co-Packaged Diode Yes
Pricing ($/Unit) Price N/A

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