• packageimg
packageimg

FF450R17ME3

Module with N-Channel Transistor IGBT, 1700V, 605A, 2250W, 11-Pin ECONOD-3 Tray

Quantity Unit Price(USD) Ext. Price
1 $269.438 $269.44
30 $258.512 $7,755.36

Inventory:9,854

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for FF450R17ME3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of FF450R17ME3

The FF450R17ME3 semiconductor module is engineered for easy paralleling, offering scalability and versatility in system design. Furthermore, its robust housing design guarantees longevity and reliability even in challenging industrial environments. The module's compact size makes it a space-efficient option, while its durable construction ensures consistent performance over an extended period

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series EconoDUAL™ 3 Package Tray
Product Status Not For New Designs IGBT Type Trench Field Stop
Configuration Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 605 A Power - Max 2250 W
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 450A Current - Collector Cutoff (Max) 3 mA
Input Capacitance (Cies) @ Vce 40.5 nF @ 25 V Input Standard
NTC Thermistor Yes Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount Package / Case Module
Supplier Device Package Module Base Product Number FF450R17

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

PSMN2R6-40YS

PSMN2R6-40YS

SOT669 N-Channel Trench MOSFET with 40V and 100A
CSD18540Q5BT

CSD18540Q5BT

NexFET Power MOSFET, N-Channel, 60V
SI7415DN-T1-GE3

SI7415DN-T1-GE3

P-Channel 60V (Drain-Source) MOSFET
BSS84PH6433XTMA1

BSS84PH6433XTMA1

This MOSFET is designed to be used in automotive electronics due to its specific characteristics
BUP311D

BUP311D

Transistors employing Insulated Gate Bipolar Technology, designed for 1200 volts and 20 amperes
IXFH15N80

IXFH15N80

effect transistor 15a id 800v 0.6ohm 1-element n-channel silicon metal-oxide semiconductor fet to-247ad to-247ad 3 pin
IRL3803PBF

IRL3803PBF

With its low on-resistance and high current capacity, IRLPBF is perfect for power switching and contro
IRF8010STRLPBF

IRF8010STRLPBF

The IRF8010STRLPBF is a powerful MOSFET device designed for high-speed switching applications
IRLMS1503TRPBF

IRLMS1503TRPBF

Channel Silicon Transistor with a Maximum Voltage Capacity of 30V and Current Handling Capability of 3
ULN2803AFWG,C,EL

ULN2803AFWG,C,EL

NPN Transistor Array