FF1000R17IE4DB2S4BOSA2
IGBT Module 2 Independent 1700 V 1390 A 6250 W Chassis Mount AG-PRIME3-1
Inventory:5,601
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : FF1000R17IE4DB2S4BOSA2
-
Package/Case : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
Datesheet : FF1000R17IE4DB2S4BOSA2 DataSheet (PDF)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | PrimePACK™3 | Package | Tray |
| Product Status | Obsolete | Configuration | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V | Current - Collector (Ic) (Max) | 1390 A |
| Power - Max | 6250 W | Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 1000A |
| Current - Collector Cutoff (Max) | 5 mA | Input Capacitance (Cies) @ Vce | 81 nF @ 25 V |
| Input | Standard | NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C | Mounting Type | Chassis Mount |
| Package / Case | Module | Supplier Device Package | AG-PRIME3-1 |
| Base Product Number | FF1000 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
FF450R06ME3
An IGBT Transistor Module that features an N-channel, rated for 600V and 550A, with a power dissipation of 1250mW
FF1200R12IE5
1200V N-Channel Transistor IGBT Module with 1.2KA in Tray Packaging
FF1800R17IP5
High-power insulated gate bipolar transistor (IGBT) modules
ZXTP05120HFFTA
This product belongs to the ZXTP05120HFF Series and is designed for medium power applications
ZXTP07040DFFTA
ZXTP07040DFFTA is a 40V PNP SOT-23F bipolar transistor with a power dissipation of 1
ZXTN08400BFFTA
SOT23F packaged NPN transistor capable of handling 400V and 0.5A
FFB2222A
Transistors with multi-chip design for bipolar junction applications
FF400R12KT3
Fast switching N-channel IGBT with a current rating of 580 A and a voltage rating of 1200 V
ZXMS6004FF
This product, known as ZXMS6004FF, is an N-channel MOSFET with self-protection features and enhancement mode operation
FF1400R17IP4
1700V N-Channel Trans IGBT Module with 1.4KA
BC549CTA
With a frequency response up to 300MHz, BC549CTA offers low noise performance at 250mV with a current of 100mA
IPB027N10N3GATMA1
Part number IPB027N10N3GATMA1
2SK1464
N-CHANNEL POWER MOSFET
IRGPC50F
With its TO-247AC housing, this IGBT chip offers a rugged and reliable solution for power electronics designs
CPC5602CTR
MOSFETs SOT-223 ROHS
FQP4N50
Trans MOSFET N-channel 500V 3.4A 3-Pin TO-220 Rail
MUBW15-12A6K
Double Bridge Configuration Insulated Gate Bipolar Transistor (IGBT) Power Integrated Module for Three-Phase Applications
SSM3K35FS
Three-pin SSM package for easy installation
2N5002
Trans GP BJT NPN 80V 5A 2000mW 3-Pin TO-59 Tray
IRFB9N60APBF
N-channel MOSFET,IRFB9N60A 9.2A 600V