FCPF190N60
N-Channel Power MOSFET with SUPERFET® II technology, 600V, 20.2A, 199mΩ, TO-220F
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.102 | $2.10 |
10 | $1.848 | $18.48 |
50 | $1.690 | $84.50 |
100 | $1.527 | $152.70 |
500 | $1.454 | $727.00 |
1000 | $1.421 | $1,421.00 |
Inventory:6,207
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Part Number : FCPF190N60
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Package/Case : TO-220-3FullPack
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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Datesheet : FCPF190N60 DataSheet (PDF)
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Series : FCPF190N60
Overview of FCPF190N60
Introducing the FCPF190N60 SuperFET®II MOSFET, a groundbreaking high voltage super-junction MOSFET that is revolutionizing the field of power electronics. Utilizing cutting-edge charge-balance technology, this MOSFET boasts incredibly low on-state resistance and reduced gate charge, resulting in unparalleled performance. Its advanced design not only minimizes conduction loss but also enhances switching capabilities, making it a top choice for applications requiring high efficiency and precise control. Furthermore, the SuperFET II MOSFET offers superior dv/dt rate and avalanche energy, surpassing the capabilities of conventional super-junction MOSFETs and setting a new standard for power MOSFET technology
Key Features
- 300mA @TJ = 150°C
- Pulse withstand voltage (PWV) up to 2000V
- High-speed switching capability
- Robust package design for reliability
Application
- Unmatched performance guaranteed.
- Flexible and versatile usage.
- Top-rated product in its class.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 20.2 A |
Rds On - Drain-Source Resistance | 199 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 74 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 39 W | Channel Mode | Enhancement |
Tradename | SuperFET II | Series | FCPF190N60 |
Brand | onsemi / Fairchild | Configuration | Single |
Height | 16.07 mm | Length | 10.36 mm |
Product Type | MOSFET | Factory Pack Quantity | 50 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 4.9 mm | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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