DI038N04PQ2-AQ
Trans MOSFET N-CH 45V 38A Automotive T/R
Inventory:7,884
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : DI038N04PQ2-AQ
-
Package/Case : PowerQFN5x6
-
Brand : Diotec Semiconductor
-
Components Classification : FET, MOSFET Arrays
-
Datesheet : DI038N04PQ2-AQ DataSheet (PDF)
Overview of DI038N04PQ2-AQ
Mosfet Array 45V 38A (Tc) 31W (Tc) Surface Mount PG-TDSON-8-4
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | Technology | Si |
Configuration | Dual | Drain to Source Voltage (Vdss) | 45V |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) | Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V | Power - Max | 31W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Package / Case | PowerQFN 5x6 | Supplier Device Package | PG-TDSON-8-4 |
Base Product Number | DI038N04 | Manufacturer | Diotec Semiconductor |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 45 V |
Id - Continuous Drain Current | 38 A | Rds On - Drain-Source Resistance | 10 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Qg - Gate Charge | 14 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 31 W |
Channel Mode | Enhancement | Tradename | DI038N04PQ2-AQ |
Series | DI0XX | Brand | Diotec Semiconductor |
Fall Time | 2 ns | Forward Transconductance - Min | 13 S |
Product Type | MOSFET | Rise Time | 30 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | Power MOSFET | Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 47 ns | Unit Weight | 0.007055 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![DI048N04PQ2-AQ](/img/package/power33.jpg)
DI048N04PQ2-AQ
Reliable 28W device suitable for harsh environments
![DI110N04PQ](/img/package/power33.jpg)
DI110N04PQ
Advanced switching device for efficient power managemen
![DI028P03PT](/img/package/power33.jpg)
DI028P03PT
Versatile MOSFET component for high-current designs (-A, -
![DI050N04PT-AQ](/img/package/power33.jpg)
DI050N04PT-AQ
Compact and efficient transistor solution for battery-powered devices and portable electronics
![DI045N03PT-AQ](/img/package/power33.jpg)
DI045N03PT-AQ
High-performance power device for heavy-duty automotive use case
![DI010N03PW](/img/package/power33.jpg)
DI010N03PW
High-performance power MOSFET for demanding applications
![DI080N03PQ](/img/package/power33.jpg)
DI080N03PQ
High-performance N-channel MOSFET for efficient power management
![DI105N04PQ-AQ](/img/package/qfn8.jpg)
DI105N04PQ-AQ
MOSFET MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101
![DI050P03PT](/img/package/power33.jpg)
DI050P03PT
Trans MOSFET P-CH 30V 50A 8-Pin QFN EP T/R
![DI050N04PT](/img/package/power33.jpg)
DI050N04PT
MOSFET MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N
![IPB60R060P7ATMA1](/img/package/d2pak3.jpg)
IPB60R060P7ATMA1
High energy efficiency MOSFET with simplified usage, PG-TO263-3 package, RoHS certified
![BDX54A](/img/package/to220.jpg)
BDX54A
Compact W transistor perfect for power management system
![APT75GN120LG](/img/package/to264.jpg)
APT75GN120LG
APT75GN120LG IGBT Transistors employ Fieldstop design for enhanced performance at low frequencies
![IXER35N120D1](/img/package/sop24.jpg)
IXER35N120D1
The IXER35N120D1 is a sophisticated Trans IGBT Chip offering N-Channel functionality
![DMN2058UW-7](/img/package/sot323.jpg)
DMN2058UW-7
N-Channel MOSFET with a current rating of 3.7A in State and 4.6A Steady, designed by Diodes Inc
![MRF6V12250HR3](/img/product.png)
MRF6V12250HR3
N-channel RF FET with a 100V rating, part number MRF6V12250HR3
![DMP4015SK3-13](/img/package/dpak.jpg)
DMP4015SK3-13
Diodes Inc DMP4015SK3-13 P-channel MOSFET Transistor, 11 A, -40 V, 3-Pin TO-252
![2SK4177-DL-1E](/img/package/d2pak3.jpg)
2SK4177-DL-1E
N-Channel Power MOSFET with 1500V rating and 2A current capability
![NPT1012B](/img/product.png)
NPT1012B
High electron mobility transistor (HEMT) with 28V N-channel and 25W capability for frequencies up to 4000MHz
![VN0300M](/img/package/to92.jpg)
VN0300M
Power MOSFET (N-Channel)