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2SK4177-DL-1E

N-Channel Power MOSFET with 1500V rating and 2A current capability

Quantity Unit Price(USD) Ext. Price
1 $3.200 $3.20
200 $1.239 $247.80
500 $1.196 $598.00
800 $1.174 $939.20

Inventory:6,886

*The price is for reference only.
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Overview of 2SK4177-DL-1E

The 2SK4177-DL-1E is a power MOSFET transistor designed for high-power switching applications. This N-channel MOSFET features a low on-resistance and high current-handling capability, making it ideal for use in power management circuits and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body Diode
  • N/A: Not Applicable
  • N/A: Not Applicable

Circuit Diagram

Include a circuit diagram showing the connections and usage of the 2SK4177-DL-1E MOSFET for a visual guide.

Key Features

  • High Power Switching: The 2SK4177-DL-1E is designed for high-power switching applications, capable of handling significant current levels.
  • Low On-Resistance: This MOSFET transistor offers low on-resistance, reducing power dissipation and improving efficiency.
  • Fast Switching Speed: With its fast switching characteristics, the 2SK4177-DL-1E enables rapid switching transitions in electronic circuits.
  • Robust Construction: Built to withstand high currents and voltages, ensuring reliable operation in demanding environments.

Note: For detailed technical specifications, please consult the 2SK4177-DL-1E datasheet.

Application

  • Power Management Systems: Ideal for use in power supply units, inverters, and voltage regulation circuits.
  • Motor Control: Suitable for motor drive circuits in industrial automation and robotics applications.
  • Switching Circuits: Used in high-power switching applications such as DC-DC converters and motor drives.

Functionality

The 2SK4177-DL-1E MOSFET transistor serves as a high-power switch in electronic circuits, providing efficient and reliable control of large currents and voltages.

Usage Guide

  • Gate Connection: Connect the gate terminal to the control signal source for switching the MOSFET.
  • Drain and Source: Connect the load circuit between the drain and source terminals for power switching operations.
  • Body Diode: Utilize the body diode for reverse current protection in the circuit.

Frequently Asked Questions

Q: Is the 2SK4177-DL-1E suitable for high-frequency applications?
A: While not specifically designed for high-frequency operation, the 2SK4177-DL-1E can be used in moderate-frequency switching applications.

Equivalent

For alternatives with similar functionalities, consider these options:

  • IRF3205: A power MOSFET transistor with comparable specifications to the 2SK4177-DL-1E for high-power switching applications.
  • STP80NF70: Another N-channel MOSFET suitable for power switching applications, offering similar performance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418AP
MSL Type 1 MSL Temp (°C) 245
Container Type REEL Container Qty. 800
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 1500
VGS Max (V) 20 VGS(th) Max (V) 3.5
ID Max (A) 2 PD Max (W) 80
RDS(on) Max @ VGS = 10 V (mΩ) 13 Qg Typ @ VGS = 10 V (nC) 37.5
Ciss Typ (pF) 380 Pricing ($/Unit) Price N/A

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