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DI035N10PT-AQ

MOSFET, Power QFN 3x3, 100V, 35A, N, 25W

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Overview of DI035N10PT-AQ

N-Channel 100 V 35A (Tc) 25W (Tc) Surface Mount 8-QFN (3x3)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 15 V Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Supplier Device Package 8-QFN (3x3) Package / Case PowerQFN 3x3
Base Product Number DI035N10 Manufacturer Diotec Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 35 A Rds On - Drain-Source Resistance 14 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.7 V
Qg - Gate Charge 22 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 25 W
Channel Mode Enhancement Tradename DI035N10PT-AQ
Series DI0XX Brand Diotec Semiconductor
Configuration Single Fall Time 5 ns
Forward Transconductance - Min 15 S Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type Power MOSFET
Typical Turn-Off Delay Time 17 ns Typical Turn-On Delay Time 21 ns
Unit Weight 0.005644 oz

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