DDB6U30N08VR
DDB6U30N08VR: High-power N-Channel Insulated Gate Bipolar Transistor
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $31.817 | $31.82 |
200 | $12.313 | $2,462.60 |
500 | $11.881 | $5,940.50 |
1000 | $11.667 | $11,667.00 |
Inventory:5,812
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Part Number : DDB6U30N08VR
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Package/Case : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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Datesheet : DDB6U30N08VR DataSheet (PDF)
Overview of DDB6U30N08VR
IGBT Module Three Phase Inverter with Brake 600 V 26 A 83.5 W Chassis Mount Module
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | Bulk | Product Status | Obsolete |
Configuration | Three Phase Inverter with Brake | Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 26 A | Power - Max | 83.5 W |
Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 20A | Current - Collector Cutoff (Max) | 1 mA |
Input Capacitance (Cies) @ Vce | 880 pF @ 25 V | Input | Standard |
NTC Thermistor | Yes | Operating Temperature | -40°C ~ 125°C |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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