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DDB2U30N08VR

N-Channel IGBT Modules rated at 600V and 25A

Quantity Unit Price(USD) Ext. Price
1 $30.348 $30.35
200 $11.745 $2,349.00
500 $11.332 $5,666.00
1000 $11.128 $11,128.00

Inventory:7,590

*The price is for reference only.
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Overview of DDB2U30N08VR

The DDB2U30N08VR is a power MOSFET designed for high efficiency and low power dissipation in various electronic applications. This MOSFET is ideal for power management, motor control, and other high-power switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for MOSFET control
  • D: Drain terminal for power input/output
  • S: Source terminal for ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DDB2U30N08VR MOSFET for a visual representation.

Key Features

  • High Efficiency: The DDB2U30N08VR offers high efficiency in power conversion and switching applications, reducing energy loss.
  • Low Power Dissipation: With low on-resistance and gate charge, this MOSFET minimizes power dissipation for improved performance.
  • High Power Handling: Capable of handling high power levels, making it suitable for high-current applications.
  • Fast Switching Speed: The MOSFET features fast switching times, enabling rapid switching operations in electronic circuits.
  • Temperature Stability: Maintains stable performance across a wide temperature range for reliable operation.

Note: For detailed technical specifications, please refer to the DDB2U30N08VR datasheet.

Application

  • Power Management: Ideal for power supply management, DC-DC converters, and voltage regulation circuits.
  • Motor Control: Suitable for motor drive circuits, PWM control, and high-power motor applications.
  • Switching Circuits: Used in high-power switching applications such as inverters, amplifiers, and power supplies.

Functionality

The DDB2U30N08VR power MOSFET provides efficient power switching and management capabilities, making it essential for various high-power electronic applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal (G) for controlling the MOSFET switching.
  • Power Connections: Connect the power input/output to the drain terminal (D) and ground to the source terminal (S) for proper operation.
  • Heat Dissipation: Ensure proper heat sinking and thermal management to maintain optimal operating conditions.

Frequently Asked Questions

Q: What is the maximum current rating of the DDB2U30N08VR?
A: The DDB2U30N08VR has a maximum current rating of X Amps.

Q: Can the DDB2U30N08VR be used in automotive applications?
A: Yes, the DDB2U30N08VR is suitable for automotive electronics, provided it meets the required specifications and standards.

Equivalent

For similar functionalities, consider these alternatives to the DDB2U30N08VR:

  • IRF540N: A power MOSFET with comparable specifications and performance characteristics.
  • STP55NF06L: This MOSFET from STMicroelectronics offers similar power handling and efficiency for high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Obsolete
Configuration 3 Independent Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 25 A Power - Max 83.5 W
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 20A Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 880 pF @ 25 V Input Standard
NTC Thermistor Yes Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount Package / Case Module
Supplier Device Package Module Base Product Number DDB2U30

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