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CPV363M4F

IGBT Module: Three-Phase Inverter, 600V, 16A, Through Hole Mounting IMS-2

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Overview of CPV363M4F

The CPV363M4F is a power MOSFET module designed for high-power switching applications. It features a compact design and high efficiency, making it suitable for various power electronics systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VIN: Input voltage
  • VOUT: Output voltage
  • GND: Ground connection
  • EN: Enable pin
  • FB: Feedback pin
  • COMP: Compensation pin
  • PWM: Pulse Width Modulation pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CPV363M4F MOSFET module for a visual representation.

Key Features

  • High-Power Switching: The CPV363M4F is designed for high-power switching applications, capable of handling large currents and voltages.
  • Compact Design: With its compact form factor, this module offers space-saving benefits in system designs.
  • High Efficiency: The MOSFET module provides high efficiency in power conversion, reducing energy losses.
  • Wide Input Voltage Range: Operates with a wide input voltage range, allowing flexibility in various power systems.
  • Protection Features: Includes overcurrent protection and thermal shutdown mechanisms for reliable operation.

Note: For detailed technical specifications, please refer to the CPV363M4F datasheet.

Application

  • Power Supplies: Ideal for use in high-power switching power supply units.
  • Motor Control: Suitable for motor control applications requiring high current handling capabilities.
  • Inverters: Used in inverter systems for converting DC power to AC power efficiently.

Functionality

The CPV363M4F power MOSFET module is designed to efficiently switch high power loads in various electronic systems, ensuring reliable power delivery and control.

Usage Guide

  • Input Voltage: Connect VIN (Input) to the power source voltage.
  • Output Voltage: Use VOUT (Output) to deliver the switched power to the load.
  • Enable Pin: Control the module operation using the EN (Enable) pin logic levels.

Frequently Asked Questions

Q: Is the CPV363M4F suitable for high-current applications?
A: Yes, the CPV363M4F is designed for high-power switching applications and can handle large currents effectively.

Q: What is the typical efficiency of the CPV363M4F module?
A: The CPV363M4F offers high efficiency in power conversion, typically above 90%, ensuring minimal energy losses.

Equivalent

For similar functionalities, consider these alternatives to the CPV363M4F:

  • IRF3205: A power MOSFET with comparable specifications and performance characteristics.
  • FDP8878: Another power MOSFET module suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules Product IGBT Silicon Modules
Configuration Hex Collector- Emitter Voltage VCEO Max 600 V
Continuous Collector Current at 25 C 16 A Package / Case IMS-2
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Brand Vishay Height 21.97 mm
Length 62.43 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole Product Type IGBT Modules
Subcategory IGBTs Technology Si
Width 7.87 mm

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