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CM1200DC-34N

N-Channel Insulated Gate Bipolar Transistor

Inventory:6,417

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
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Overview of CM1200DC-34N

Key Features

  • Low Drive Power
  • Low VCE(sat)
  • Discrete Super-Fast Recovery Free-Wheel Diode
  • Isolated Baseplate for Easy Heat Sinking

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Dual
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 2.15 V
Continuous Collector Current at 25 C 1.2 kA Gate-Emitter Leakage Current 500 nA
Pd - Power Dissipation 6.5 kW Package / Case Module
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand Mitsubishi Electric Maximum Gate Emitter Voltage 20 V
Mounting Style SMD/SMT Product Type IGBT Modules
Series CM1200 Factory Pack Quantity 5
Subcategory IGBTs Technology Si

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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