CM1200DC-34N
N-Channel Insulated Gate Bipolar Transistor
Inventory:6,417
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- 365 Days Quality Guarantee
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Part Number : CM1200DC-34N
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Package/Case : Module
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Brands : Mitsubishi Electric
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Components Categories : IGBT Modules
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Datesheet : CM1200DC-34N DataSheet (PDF)
Overview of CM1200DC-34N
Key Features
- Low Drive Power
- Low VCE(sat)
- Discrete Super-Fast Recovery Free-Wheel Diode
- Isolated Baseplate for Easy Heat Sinking
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 2.15 V |
Continuous Collector Current at 25 C | 1.2 kA | Gate-Emitter Leakage Current | 500 nA |
Pd - Power Dissipation | 6.5 kW | Package / Case | Module |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Mitsubishi Electric | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | SMD/SMT | Product Type | IGBT Modules |
Series | CM1200 | Factory Pack Quantity | 5 |
Subcategory | IGBTs | Technology | Si |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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