• BUF460AV ISOTOP
BUF460AV ISOTOP

BUF460AV

The BUF460AV transistor: A silicon-based NPN device optimized for high-power applications

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Overview of BUF460AV

The BUF460AV is a high-voltage, high-current, NPN transistor with integrated protection diodes. It is designed for use in high-power amplifier and switching applications where robust performance is required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector
  • DB1: Diode Between Base and Collector
  • DB2: Diode Between Base and Emitter

Circuit Diagram

Include a circuit diagram to illustrate the connections and operation of the BUF460AV transistor for a better understanding of its usage.

Key Features

  • High Voltage and Current Ratings: The BUF460AV can handle high voltage and current levels, suitable for demanding applications.
  • Integrated Protection Diodes: Includes protection diodes for safe operation and reliability in switching circuits.
  • Robust Construction: Designed for robust performance in high-power amplifier and switching applications.
  • Temperature Stability: Offers good thermal stability for consistent performance across operating conditions.
  • Extended Lifespan: Built to withstand prolonged usage and high stress environments for long-term reliability.

Note: For detailed technical specifications, please refer to the BUF460AV datasheet.

Application

  • High-Power Amplifiers: Ideal for high-power amplifier circuits requiring high voltage and current capabilities.
  • Switching Circuits: Suitable for use in switching circuits where reliable and robust transistor performance is vital.
  • Power Supplies: Can be utilized in power supply designs that demand high-current handling and protection features.

Functionality

The BUF460AV transistor is a high-voltage, high-current NPN transistor with integrated protection diodes, offering reliable and durable performance in high-power applications.

Usage Guide

  • Mounting: Ensure proper heatsinking for effective thermal management, especially in high-power applications.
  • Biasing: Follow recommended biasing configurations as outlined in the datasheet to achieve optimal performance.
  • Protection: Utilize the integrated diodes for protection against voltage transients and inductive kickback.

Frequently Asked Questions

Q: Is the BUF460AV suitable for audio amplifier applications?
A: Yes, the BUF460AV can be used in audio amplifier circuits where high power and voltage handling are required.

Equivalent

For similar functionalities, consider these alternatives to the BUF460AV:

  • BUF460A: A similar high-voltage, high-current NPN transistor without integrated protection diodes, suitable for applications requiring basic transistor functionality.
  • MJL21193: This is a complementary NPN transistor with similar high-power capabilities, offering a different package and pinout configuration compared to the BUF460AV.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BUF460AV Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS Package Description ISOTOP-3
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics Case Connection ISOLATED
Collector Current-Max (IC) 90 A Collector-Emitter Voltage-Max 450 V
Configuration SINGLE Fall Time-Max (tf) 200 ns
JESD-30 Code R-XUFM-X3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type NPN
Power Dissipation Ambient-Max 270 W Power Dissipation-Max (Abs) 270 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish NICKEL Terminal Form UNSPECIFIED
Terminal Position UPPER Transistor Application SWITCHING
Transistor Element Material SILICON VCEsat-Max 2 V

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