BSM150GB170DLC
N-Channel Module-7 for BSM150GB170DLC
Inventory:8,991
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BSM150GB170DLC
-
Package/Case : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
Datesheet : BSM150GB170DLC DataSheet (PDF)
The BSM150GB170DLC is a high power IGBT module designed for applications requiring high efficiency and robust power handling capabilities. It is suitable for use in industrial motor drives, renewable energy systems, and power supply units. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM150GB170DLC IGBT module for a visual representation. Note: For detailed technical specifications, please refer to the BSM150GB170DLC datasheet. Functionality The BSM150GB170DLC is a high power IGBT module capable of efficiently managing and controlling high power levels in various industrial and energy applications. Usage Guide Q: What is the maximum power handling capability of the BSM150GB170DLC? Q: Can the BSM150GB170DLC operate at high frequencies? For similar functionalities, consider these alternatives to the BSM150GB170DLC:Overview of BSM150GB170DLC
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The BSM150GB170DLC is designed to handle high power levels up to a specified maximum rating. Refer to the datasheet for precise details.
A: Yes, this IGBT module is designed for high frequency operation, allowing for efficient power conversion in applications requiring high switching speeds.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 2.6 V |
Continuous Collector Current at 25 C | 300 A | Gate-Emitter Leakage Current | 200 nA |
Pd - Power Dissipation | 1.25 kW | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Infineon Technologies | Height | 30.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100710 BSM150GB170DLCHOSA1 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BSS126H6327XTSA2](/files/uploads/product/s/c165e26911ac44d49951c7c58bb325e9.webp)
BSS126H6327XTSA2
SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating
![BSZ096N10LS5ATMA1](/files/uploads/product/s/c22abd53a0074d0c9d0e9b40aafbdb87.webp)
BSZ096N10LS5ATMA1
OptiMOSTM5Power-Transistor,100V
![BSP613PH6327XTSA1](/files/uploads/product/s/79ea39bd39754352bd269045c808aa00.webp)
BSP613PH6327XTSA1
P-MOSFET transistor with unipolar operation, -60V voltage rating, -2.9A current rating, and 1.8W power dissipation in PG-SOT223 package
![PBSS4350Z,135](/files/uploads/product/s/7656189f24594278a1f21e332a58ccea.webp)
PBSS4350Z,135
NPN3ASOT223PBSS4350Z, PK with 135 of product PBSS4350Z
![BSH103,215](/files/uploads/product/s/301702731e90472fbeb98ec4873afbf3.webp)
BSH103,215
N-channel MOSFET transistor with 30V voltage and 0.85A current
![BSC600N25NS3 G](/files/uploads/product/s/ae25802a96554fe6859b284989c6ad6a.webp)
BSC600N25NS3 G
High-performance Power Transistor
![BSP52T1G](/files/uploads/product/s/015d577991084514896734e58b20a644.webp)
BSP52T1G
NPN Small-Signal Darlington Transistor
![BSC077N12NS3 G](/files/uploads/product/s/bb69a7f30705490ba43eb722c5d14890.webp)
BSC077N12NS3 G
-pin TDSON EP package
![BSZ16DN25NS3G](/files/uploads/product/s/a5c66d7e4d6b45b688389290ca66ac99.webp)
BSZ16DN25NS3G
Advanced power management solutions for modern electronics
![BC856BS,115](/img/package/sc70.jpg)
BC856BS,115
Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![SI4401BDY-T1-E3](/files/uploads/product/s/1134961f-0507-4b86-5ff1-08dbc6589f1f.webp)
SI4401BDY-T1-E3
Unipolar Transistor
![SLA5074](/img/package/sip.jpg)
SLA5074
MOSFETs ZIP-15 ROHS
![2N4852](/img/package/can8.jpg)
2N4852
High-quality digital signal processo
![HGTG20N50C1D](/img/package/to247.jpg)
HGTG20N50C1D
Chip for N-channel Insulated Gate Transistor (IGBT), Rated at 500 Volts and 26 Amperes, TO-247 Package
![MTP23P06VG](/img/package/to220.jpg)
MTP23P06VG
High current Power MOSFET rated at 23 Amps and 60 Volts
![BSP52T1](/img/package/sot223.jpg)
BSP52T1
Bipolar Darlington transistors capable of handling 1A and 80V
![SUD45P03-15](/img/package/to252.jpg)
SUD45P03-15
P-Channel Transistor with 30V Voltage Rating and 13A Current Capability
![MTY25N60E](/img/package/to264.jpg)
MTY25N60E
MOSFETs MTY25N60E ROHS
![BSS52](/files/uploads/product/s/635609aa76bf462bb5ca27d16d39bab6.webp)
BSS52
60V and 5A capable, suitable for various electronic circuits
![ZXMN4A06GTA](/img/package/sot223.jpg)
ZXMN4A06GTA
Available in tape and reel packaging