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BSZ017NE2LS5IATMA1

MOSFET TRENCH <= 40V

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Overview of BSZ017NE2LS5IATMA1

N-Channel 25 V 27A (Ta), 40A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8-FL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS 5 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 12 V
Power Dissipation (Max) 2.1W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8-FL
Package / Case TSDSON-8 Base Product Number BSZ017
Manufacturer Infineon Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 25 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 1.9 mOhms Vgs - Gate-Source Voltage - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 50 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Fall Time 3 ns
Forward Transconductance - Min 60 S Height 1.1 mm
Length 3.3 mm Product Type MOSFET
Rise Time 4 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 4 ns
Width 3.3 mm Part # Aliases BSZ017NE2LS5I SP001288152
Unit Weight 0.001367 oz

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