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BSS138WH6327XTSA1

Automotive-grade N-channel MOSFET designed for a maximum voltage of 60V and a current capability of 0.28A, featuring a compact SOT-323 package

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Overview of BSS138WH6327XTSA1

The BSS138WH6327XTSA1 is a logic level N-channel enhancement mode field-effect transistor (FET) designed for use in low voltage applications. This transistor features a low threshold voltage, making it ideal for level shifting and voltage regulation in various circuit designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSS138WH6327XTSA1 FET for a visual representation.

Key Features

  • Logic Level N-Channel FET: The BSS138WH6327XTSA1 is a logic level N-channel FET suitable for low voltage applications.
  • Low Threshold Voltage: With a low VGS(th) of typically 1.0V, this FET can be driven by logic level signals.
  • Enhancement Mode: This FET operates in the enhancement mode, enhancing conductivity between the source and drain terminals when the gate voltage exceeds the threshold.
  • High Efficiency: The BSS138WH6327XTSA1 offers low on-state resistance for efficient power handling.
  • Small Package: Available in a compact SOT-323 package, suitable for space-constrained designs.

Note: For detailed technical specifications, please refer to the BSS138WH6327XTSA1 datasheet.

Application

  • Level Shifting: Ideal for level shifting applications in circuits requiring voltage translation.
  • Voltage Regulation: Suitable for voltage regulation tasks in low voltage systems.
  • Switching Circuits: Used in switching applications for efficient signal control.

Functionality

The BSS138WH6327XTSA1 is a logic level N-channel FET that facilitates voltage level shifting and regulation in electronic circuits. It provides a cost-effective and efficient solution for various low voltage applications.

Usage Guide

  • Gate Control: Apply the appropriate gate-source voltage to control the conductivity between the source and drain terminals.
  • Source and Drain Connections: Connect the source (S) and drain (D) terminals to the respective circuit nodes for proper signal flow.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the BSS138WH6327XTSA1?
A: The BSS138WH6327XTSA1 typically has a maximum VDS rating of 50V.

Q: Can the BSS138WH6327XTSA1 be used in high-speed switching applications?
A: While the BSS138WH6327XTSA1 is efficient, it is recommended to check the specific datasheet for switching speed characteristics and consider alternatives for high-speed requirements.

Equivalent

For similar functionalities, consider these alternatives to the BSS138WH6327XTSA1:

  • IRLML2246TRPBF: An N-channel FET with similar low threshold characteristics suitable for low voltage applications.
  • NTSD1XV04P: This N-channel FET offers comparable performance in voltage regulation and level shifting applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS, RoHS compliant, non dry
packageNameMarketing SOT-323 msl 1
halogenFree yes customerInfo STANDARD
fgr 782 productClassification COM
productStatusInfo active and preferred hfgr B
packageName PG-SOT323-3 pbFree yes
moistureProtPack NON DRY orderingCode SP000924068
fourBlockPackageName PG-SOT323-3-2 rohsCompliant yes
opn BSS138WH6327XTSA1 completelyPbFree yes
sapMatnrSali SP000924068

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