BSM150GB60DLC
BSM150GB60DLC is an Insulated Gate Bipolar Transistor capable of handling 180A of collector current and featuring a breakdown voltage of 600V
Quantity | Unit Price(USD) | Ext. Price |
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1 | $194.689 | $194.69 |
200 | $75.343 | $15,068.60 |
500 | $72.696 | $36,348.00 |
1000 | $71.387 | $71,387.00 |
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Part Number : BSM150GB60DLC
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Package/Case : MODULE
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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Datesheet : BSM150GB60DLC DataSheet (PDF)
The BSM150GB60DLC is a dual IGBT module designed for high-power applications such as motor drives, renewable energy systems, and industrial automation. It features high current and voltage ratings, making it suitable for demanding and rugged industrial environments. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM150GB60DLC for a visual representation. Note: For detailed technical specifications, please refer to the BSM150GB60DLC datasheet. Functionality The BSM150GB60DLC is a dual IGBT module designed to handle high-power switching and control in industrial applications. It provides reliable and efficient performance in demanding environments. Usage Guide Q: What are the maximum current and voltage ratings of the BSM150GB60DLC? Q: Can the BSM150GB60DLC withstand harsh industrial environments? For similar functionalities, consider these alternatives to the BSM150GB60DLC:Overview of BSM150GB60DLC
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The BSM150GB60DLC is rated for high currents and voltages, with specific ratings detailed in the datasheet.
A: Yes, the BSM150GB60DLC is designed to withstand rugged industrial conditions, making it suitable for harsh environments.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.95 V |
Continuous Collector Current at 25 C | 180 A | Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 730 W | Package / Case | 32 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Infineon Technologies | Height | 30.5 mm |
Length | 94 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 34 mm |
Part # Aliases | SP000100476 BSM150GB60DLCHOSA1 | Unit Weight | 6.349313 oz |
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