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BSL372SNH6327XTSA1

TSOP6 packaged transistor ideal for high-reliability applications up to 100V

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Overview of BSL372SNH6327XTSA1

N-Channel 100 V 2A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ Product Status Obsolete
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 220mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 329 pF @ 25 V
Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TSOP6-6
Package / Case TSOP-6 Manufacturer Infineon
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 2 A Rds On - Drain-Source Resistance 220 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 9.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Fall Time 22.1 ns
Forward Transconductance - Min 5.3 S Height 1.1 mm
Length 3 mm Product Type MOSFET
Rise Time 4.8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 54 ns Typical Turn-On Delay Time 3.5 ns
Width 1.5 mm Part # Aliases BSL372SN H6327 SP000942920
Unit Weight 0.000705 oz

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