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BSC0702LSATMA1

Transistor for efficient power management

Quantity Unit Price(USD) Ext. Price
1 $1.087 $1.09
10 $0.924 $9.24
30 $0.844 $25.32
100 $0.763 $76.30
500 $0.581 $290.50
1000 $0.556 $556.00

Inventory:5,137

*The price is for reference only.
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Overview of BSC0702LSATMA1

N-Channel 60 V 100A (Tc) 83W (Tc) Surface Mount PG-TDSON-8

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ Product Status Not For New Designs
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 30 V
FET Feature Standard Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8 Package / Case TDSON-8
Base Product Number BSC0702 Manufacturer Infineon
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A Rds On - Drain-Source Resistance 2.7 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 30 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 83 W
Channel Mode Enhancement Tradename OptiMOS
Brand Infineon Technologies Configuration Single
Fall Time 5.4 ns Forward Transconductance - Min 60 S
Product Type MOSFET Rise Time 4.8 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 7.7 ns Part # Aliases BSC0702LS SP001589462
Unit Weight 0.004180 oz

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