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BSC034N10LS5ATMA1

High-voltage N-channel MOSFET transistor suitable for applications requiring a maximum current of 19 amps

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Overview of BSC034N10LS5ATMA1

N-Channel 100 V 19A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ 5 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 115µA Gate Charge (Qg) (Max) @ Vgs 46 nC @ 4.5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 50 V
Power Dissipation (Max) 2.5W (Ta), 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-7
Package / Case TDSON-8 Base Product Number BSC034
Manufacturer Infineon Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 3.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V Qg - Gate Charge 46 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 156 W Channel Mode Enhancement
Brand Infineon Technologies Fall Time 16 ns
Forward Transconductance - Min 60 S Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 40 ns Typical Turn-On Delay Time 9..6 ns
Part # Aliases BSC034N10LS5 SP001385620 Unit Weight 0.032981 oz

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