BSC026NE2LS5ATMA1
25V 82A N-Channel MOSFET
Inventory:6,346
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Part Number : BSC026NE2LS5ATMA1
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Package/Case : TDSON-8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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Datesheet : BSC026NE2LS5ATMA1 DataSheet (PDF)
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Series : BSC026NE2LS5
Overview of BSC026NE2LS5ATMA1
Elevate your projects with the BSC026NE2LS5ATMA1, a product that offers unparalleled efficiency and power capabilities. Infineon's dedication to pushing the boundaries of technology is evident in this latest offering, which paves the way for future advancements in power management. Whether you're looking to optimize standby power or maximize operational performance, this product is sure to exceed your expectations
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | OptiMOS 5 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 25 V | Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 2.6mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
Vgs (Max) | ±16V | Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 12 V |
Power Dissipation (Max) | 2.5W (Ta), 29W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-7 |
Package / Case | TDSON-8 | Base Product Number | BSC026 |
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | REACH | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 82 A | Rds On - Drain-Source Resistance | 4 mOhms |
Vgs - Gate-Source Voltage | - 16 V, + 16 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 12 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 29 W |
Channel Mode | Enhancement | Tradename | OptiMOS |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 2 ns | Forward Transconductance - Min | 55 S |
Height | 1.27 mm | Length | 5.9 mm |
Product Type | MOSFET | Rise Time | 3 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 13 ns |
Typical Turn-On Delay Time | 3 ns | Width | 5.15 mm |
Part # Aliases | BSC026NE2LS5 SP001212432 | Unit Weight | 0.004151 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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