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BCR08PN

Bipolar transistor for low-power applications

Quantity Unit Price(USD) Ext. Price
1 $0.217 $0.22
200 $0.087 $17.40
500 $0.084 $42.00
1000 $0.083 $83.00

Inventory:7,325

*The price is for reference only.
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Overview of BCR08PN

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 60V 100mA 170MHz 250mW Surface Mount SOT-363

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Strip Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 60V Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 170MHz Power - Max 250mW
Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 Base Product Number BCR08

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