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APT2X101DQ100J

Rectifier Diode with 1000V Ultrafast Soft Recovery Technology

Inventory:6,636

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Overview of APT2X101DQ100J

The APT2X101DQ100J is a high-performance power MOSFET designed for use in demanding electronic applications. This MOSFET features a low on-resistance and high current capability, making it ideal for power switching and amplification applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VDD: Drain Voltage Supply
  • VSS: Source Voltage Supply
  • FG: Gate Floating
  • VCC: Power Supply Voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the APT2X101DQ100J MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The APT2X101DQ100J offers a low on-resistance, minimizing power losses and heat generation during operation.
  • High Current Capability: With its high current-handling capacity, this MOSFET is suitable for high-power applications.
  • Fast Switching Speed: The MOSFET features fast switching characteristics, enabling efficient power control in circuits.
  • High Power Dissipation: Designed for high power dissipation, the APT2X101DQ100J can handle significant power loads without overheating.
  • Robust Construction: Built with durable materials, this MOSFET provides reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the APT2X101DQ100J datasheet.

Application

  • Power Switching: Ideal for use in power switching circuits, such as motor control and power supplies.
  • Amplification: Suitable for amplification applications in audio amplifiers, RF circuits, and more.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power in various applications.

Functionality

The APT2X101DQ100J MOSFET is a high-performance power transistor that enables efficient power control and amplification in electronic circuits. It serves as a critical component in applications requiring high current handling and low on-resistance.

Usage Guide

  • Gate Control: Apply the appropriate voltage levels to the Gate (G) pin to control the switching behavior of the MOSFET.
  • Power Connections: Connect the Drain (D) and Source (S) pins to the respective power supplies for proper operation.
  • Heat Dissipation: Ensure proper heat sinking to manage the heat generated during high-power operation.

Frequently Asked Questions

Q: What is the maximum current rating of the APT2X101DQ100J?
A: The APT2X101DQ100J is rated for a maximum continuous current of 100A.

Q: Is the APT2X101DQ100J suitable for high-frequency switching applications?
A: Yes, this MOSFET offers fast switching speeds and is suitable for high-frequency power switching applications.

Equivalent

For similar functionalities, consider these alternatives to the APT2X101DQ100J:

  • IRF1010EZ: This power MOSFET from Infineon offers comparable performance and characteristics to the APT2X101DQ100J.
  • FDP8878: A high-performance MOSFET with similar power handling capabilities and low on-resistance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Type Silicon Discrete Diode Forward Voltage (V) [typ] 1.9 - 2.5
Reverse Recovery Time (ns) [typ] 20 - 45 Package Type(s) D3PAK, SOT-227, TO-220, TO-247, TO-264

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