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2SD1664T100R

NPN Bipolar Junction Transistor, SC-62 Type

Inventory:5,219

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Overview of 2SD1664T100R

The 2SD1664T100R is a high-performance bipolar transistor designed for demanding high-voltage applications. With a collector current of 1.5A and a collector-emitter voltage of 700V, this transistor is well-suited for power supply circuits, motor control, and other high-voltage applications. Its TO-220F package offers thermal and electrical isolation, as well as easy mounting on a heatsink for effective heat dissipation. The 2SD1664T100R features a low saturation voltage of 1.2V at a collector current of 0.5A, ensuring minimal power loss during operation. Its transition frequency (fT) of 30MHz makes it suitable for high-frequency applications, while its wide storage temperature range of -55°C to 150°C enables reliable operation in a variety of environmental conditions

Key Features

  • 1) Low VCE(sat) = 0.15V(Typ.)
  • (lC / lB = 500mA / 50mA)
  • 2) Compliments 2SB1132 / 2SB1237

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-62 Package Description MPT3, SC-62, 3 PIN
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.75
Samacsys Manufacturer ROHM Semiconductor Case Connection COLLECTOR
Collector Current-Max (IC) 1 A Collector-Emitter Voltage-Max 32 V
Configuration SINGLE DC Current Gain-Min (hFE) 180
JESD-30 Code R-PSSO-F3 JESD-609 Code e2
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN COPPER
Terminal Form FLAT Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 150 MHz
VCEsat-Max 0.4 V

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