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2SC4081T106R

Transistor General Purpose Bipolar Junction Transistor NPN 50 Volts 0.15 Amps 3-Pin Ultra Miniature Transistor/Reel

Quantity Unit Price(USD) Ext. Price
20 $0.021 $0.42
200 $0.019 $3.80
600 $0.018 $10.80
3000 $0.014 $42.00
9000 $0.014 $126.00
21000 $0.013 $273.00

Inventory:9,792

*The price is for reference only.
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Overview of 2SC4081T106R

The 2SC4081T106R is a high-frequency, high-speed switching transistor designed for use in various electronic applications. It features a low collector-emitter saturation voltage and high transition frequency, making it suitable for amplifier and oscillator circuits where fast switching speeds are required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SC4081T106R transistor for a visual representation.

Key Features

  • High-Frequency Capability: The 2SC4081T106R is capable of operating at high frequencies, making it suitable for RF applications.
  • Low Saturation Voltage: This transistor exhibits low collector-emitter saturation voltage, reducing power dissipation in switching applications.
  • High Transition Frequency: With a high transition frequency, the 2SC4081T106R offers fast switching characteristics.
  • High Voltage Capability: The transistor can withstand relatively high collector-emitter voltages, enabling it to be used in various voltage levels.

Note: For detailed technical specifications, please refer to the 2SC4081T106R datasheet.

Application

  • Amplifier Circuits: Ideal for use in amplifier circuits due to its high-speed switching capabilities.
  • Oscillator Circuits: Suitable for oscillator circuits where high-frequency operation is required.
  • RF Applications: Commonly used in radio frequency applications for signal amplification and modulation.

Functionality

The 2SC4081T106R transistor is designed to provide high-speed switching performance with low saturation voltage, making it a reliable component for applications requiring swift signal handling.

Usage Guide

  • Emitter: Connect the emitter terminal to the ground or common reference point.
  • Base: Apply input signals to the base terminal for controlling the transistor's conductivity.
  • Collector: The collector terminal is used to collect the output signal or current.

Frequently Asked Questions

Q: What frequency range is the 2SC4081T106R suitable for?
A: The 2SC4081T106R is designed for high-frequency operation, typically in the RF range.

Q: Can the 2SC4081T106R be used in power amplifier designs?
A: Yes, the 2SC4081T106R is suitable for power amplifier applications due to its high-speed and low saturation voltage characteristics.

Equivalent

For similar functionalities, consider these alternatives to the 2SC4081T106R:

  • 2SC3355: A high-speed switching transistor with similar characteristics to the 2SC4081T106R.
  • 2SC5200: A power transistor capable of handling high voltages and currents, suitable for power amplification applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 50 V
Collector- Base Voltage VCBO 60 V Emitter- Base Voltage VEBO 7 V
Maximum DC Collector Current 150 mA Pd - Power Dissipation 200 mW
Gain Bandwidth Product fT 180 MHz Maximum Operating Temperature + 150 C
Brand onsemi / Fairchild DC Collector/Base Gain hfe Min 180 at 1 mA, 6 V
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si

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