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2SB1260T100Q

Bipolar Transistors - BJT PNP 80V 1A SO-89

Quantity Unit Price(USD) Ext. Price
5 $0.169 $0.84
50 $0.149 $7.45
150 $0.140 $21.00
1000 $0.130 $130.00
2000 $0.125 $250.00
5000 $0.122 $610.00

Inventory:7,983

*The price is for reference only.
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Overview of 2SB1260T100Q

The 2SB1260T100Q transistor is a PNP type, capable of handling a Collector Emitter Voltage V(Br)Ceo of 80V and a DC Collector Current of 1A. With a Power Dissipation of 500mW, this transistor is suitable for a variety of low-power applications. The surface mount packaging and 3 pins make it easy to integrate into electronic circuits. The Transition Frequency Ft of 100MHz ensures fast switching speeds, while the DC Current Gain Hfe of 120Hfe provides amplification for the signal. Additionally, the transistor is RoHS compliant, meeting environmental standards for lead-free manufacturing

Key Features

  • 1) Hight breakdown voltage and high current.
  • BVCEO= −80V, IC = −1A
  • 2) Good hFE linearty.
  • 3) Low VCE(sat).
  • 4) Complements the 2SD1898 / 2SD1733.

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-62 Package Description ROHS COMPLIANT, SC-62, 3 PIN
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer ROHM Semiconductor
Case Connection COLLECTOR Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V Configuration SINGLE
DC Current Gain-Min (hFE) 120 JESD-30 Code R-PSSO-F3
JESD-609 Code e2 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu) Terminal Form FLAT
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

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