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2SB1132T100R

2SB1132 Series 32V 1A transistor

Quantity Unit Price(USD) Ext. Price
1 $0.161 $0.16
10 $0.131 $1.31
30 $0.118 $3.54
100 $0.102 $10.20
500 $0.095 $47.50
1000 $0.077 $77.00

Inventory:6,975

*The price is for reference only.
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Overview of 2SB1132T100R

Bipolar (BJT) Transistor PNP 32 V 1 A 150MHz 2 W Surface Mount MPT3

Key Features

  • 1) Low VCE(sat).
  • VCE(sat)= -0.2V(Typ.)
  • (IC / IB = -500mA / -50mA)
  • 2) Compliments 2SD1664 / 2SD1858
  • Structure
  • Epitaxial planar type
  • PNP silicon transistor

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-62 Package Description SC-62, 3 PIN
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.75
Samacsys Manufacturer ROHM Semiconductor Case Connection COLLECTOR
Collector Current-Max (IC) 1 A Collector-Base Capacitance-Max 30 pF
Collector-Emitter Voltage-Max 32 V Configuration SINGLE
DC Current Gain-Min (hFE) 180 JESD-30 Code R-PSSO-F3
JESD-609 Code e2 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type PNP
Power Dissipation Ambient-Max 2 W Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN COPPER Terminal Form FLAT
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER Transistor Element Material SILICON
Transition Frequency-Nom (fT) 150 MHz VCEsat-Max 0.5 V

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