2N6031
Trans GP BJT PNP 140V 16A 200000mW 3-Pin(2+Tab) TO-3 Tray
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $351.337 | $351.34 |
200 | $140.186 | $28,037.20 |
500 | $135.501 | $67,750.50 |
1000 | $133.187 | $133,187.00 |
Inventory:8,562
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Part Number : 2N6031
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Package/Case : TO-3
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Brand : MICROCHIP
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Components Classification : Single Bipolar Transistors
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Datesheet : 2N6031 DataSheet (PDF)
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Series : 2N6031
The 2N6031 is a high-power NPN transistor designed for general-purpose amplifier and switching applications. This transistor offers high current and voltage ratings, making it suitable for a wide range of electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2N6031 transistor for a visual representation. Note: For detailed technical specifications, please refer to the 2N6031 datasheet. Functionality The 2N6031 transistor acts as a reliable amplifier or switch in electronic circuits, providing high power handling capabilities for various applications. Usage Guide Q: What are the typical applications of the 2N6031 transistor? Q: Can the 2N6031 withstand high temperatures? For similar functionalities, consider these alternatives to the 2N6031:Overview of 2N6031
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The 2N6031 transistor is commonly used in amplifier and switching circuits for various electronic applications requiring high power handling capabilities.
A: Yes, the 2N6031 transistor is designed to operate reliably at elevated temperatures, making it suitable for applications where temperature variations occur.Equivalent
![](/files/uploads/product/b/bfbc8bacf477405db1f4ca079d8112ef.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | ON Semiconductor | Product Category | IC Chips |
Mfr | Microchip Technology | Series | - |
Package | Bulk | Product-Status | Active |
Transistor-Type | PNP | Current-Collector-Ic-Max | 16 A |
Voltage-Collector-Emitter-Breakdown-Max | 140 V | Vce-Saturation-Max-Ib-Ic | - |
Current-Collector-Cutoff-Max | 200 W | DC-Current-Gain-hFE-Min-Ic-Vce | Through Hole |
RoHS | N | Mounting Style | Through Hole |
Package / Case | TO-204-2 | Transistor Polarity | PNP |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 140 V |
Collector- Base Voltage VCBO | 140 V | Emitter- Base Voltage VEBO | 7 V |
Collector-Emitter Saturation Voltage | 2 V | Maximum DC Collector Current | 16 A |
Pd - Power Dissipation | 200 W | Gain Bandwidth Product fT | 1 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Brand | onsemi | Continuous Collector Current | 16 A |
DC Collector/Base Gain hfe Min | 15 | Height | 8.51 mm |
Length | 39.37 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 100 | Subcategory | Transistors |
Technology | Si | Width | 26.67 mm |
Unit Weight | 0.056438 oz |
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