• 2N6031 TO-3
2N6031 TO-3

2N6031

Trans GP BJT PNP 140V 16A 200000mW 3-Pin(2+Tab) TO-3 Tray

Quantity Unit Price(USD) Ext. Price
1 $351.337 $351.34
200 $140.186 $28,037.20
500 $135.501 $67,750.50
1000 $133.187 $133,187.00

Inventory:8,562

*The price is for reference only.
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Overview of 2N6031

The 2N6031 is a high-power NPN transistor designed for general-purpose amplifier and switching applications. This transistor offers high current and voltage ratings, making it suitable for a wide range of electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connects to the positive supply voltage for output.
  • Base (B): Controls the flow of current through the transistor when properly biased.
  • Emitter (E): Connects to the ground or common reference point.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N6031 transistor for a visual representation.

Key Features

  • High Power: The 2N6031 offers high power dissipation and can handle significant current and voltage levels.
  • General-Purpose: Suitable for various amplifier and switching applications in electronic circuits.
  • NPN Configuration: Utilizes NPN transistor configuration for easy integration into circuits.
  • Robust Construction: Designed to withstand high temperatures and harsh operating conditions.

Note: For detailed technical specifications, please refer to the 2N6031 datasheet.

Application

  • Amplification: Used in audio and RF amplifier circuits for signal amplification.
  • Switching: Employed in electronic switches for controlling high-power loads.
  • Power Regulation: Utilized in voltage regulator circuits for stable power supply output.

Functionality

The 2N6031 transistor acts as a reliable amplifier or switch in electronic circuits, providing high power handling capabilities for various applications.

Usage Guide

  • Connection: Connect the collector (C) to the positive supply voltage, the base (B) to the controlling signal, and the emitter (E) to the ground or common reference point.
  • Biasing: Ensure proper biasing of the base-emitter junction to control the transistor's conduction.
  • Heat Dissipation: Provide adequate heat sinking to dissipate heat generated during operation.

Frequently Asked Questions

Q: What are the typical applications of the 2N6031 transistor?
A: The 2N6031 transistor is commonly used in amplifier and switching circuits for various electronic applications requiring high power handling capabilities.

Q: Can the 2N6031 withstand high temperatures?
A: Yes, the 2N6031 transistor is designed to operate reliably at elevated temperatures, making it suitable for applications where temperature variations occur.

Equivalent

For similar functionalities, consider these alternatives to the 2N6031:

  • 2N3055: A widely used NPN power transistor with comparable power handling capabilities.
  • MJ15003: High-power NPN transistor suitable for demanding amplifier and switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer ON Semiconductor Product Category IC Chips
Mfr Microchip Technology Series -
Package Bulk Product-Status Active
Transistor-Type PNP Current-Collector-Ic-Max 16 A
Voltage-Collector-Emitter-Breakdown-Max 140 V Vce-Saturation-Max-Ib-Ic -
Current-Collector-Cutoff-Max 200 W DC-Current-Gain-hFE-Min-Ic-Vce Through Hole
RoHS N Mounting Style Through Hole
Package / Case TO-204-2 Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 140 V
Collector- Base Voltage VCBO 140 V Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 2 V Maximum DC Collector Current 16 A
Pd - Power Dissipation 200 W Gain Bandwidth Product fT 1 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Brand onsemi Continuous Collector Current 16 A
DC Collector/Base Gain hfe Min 15 Height 8.51 mm
Length 39.37 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 100 Subcategory Transistors
Technology Si Width 26.67 mm
Unit Weight 0.056438 oz

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