• 2N1613 TO-5-3
2N1613 TO-5-3

2N1613

Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-39 Bag

Quantity Unit Price(USD) Ext. Price
1 $48.661 $48.66
200 $18.831 $3,766.20
500 $18.170 $9,085.00
1000 $17.843 $17,843.00

Inventory:5,623

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for 2N1613 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of 2N1613

The 2N1613 is a general-purpose NPN transistor commonly used in electronic circuits for amplification and switching purposes. It is designed to handle moderate power levels and currents, making it suitable for a wide range of applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Controls the flow of current from the transistor.
  • Base (B): Controls the activation of the transistor.
  • Collector (C): Collects the current amplified by the transistor.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N1613 transistor for a visual representation.

Key Features

  • NPN Transistor: The 2N1613 is an NPN type transistor known for its amplification capabilities.
  • Medium Power Rating: With a moderate power rating, this transistor can handle various power levels.
  • General-Purpose: Suitable for general electronic circuits requiring amplification or switching functions.
  • Low Cost: The 2N1613 is a cost-effective solution for basic transistor applications.

Note: For detailed technical specifications, please refer to the 2N1613 datasheet.

Application

  • Amplification: Widely used in audio amplifiers and signal processing circuits for amplifying signals.
  • Switching: Suitable for switching applications in electronic devices and circuits.
  • Oscillator Circuits: Used in oscillator circuits to generate specific frequencies.

Functionality

The 2N1613 NPN transistor is employed for amplification and switching tasks in electronic circuits, providing reliable performance and versatility.

Usage Guide

  • Connections: Connect the emitter, base, and collector pins of the transistor according to the circuit requirements.
  • Operating Conditions: Ensure that the transistor operates within its specified power and current ratings for optimal performance.
  • Biasing: Properly bias the base of the transistor to control its amplification and switching characteristics.

Frequently Asked Questions

Q: What is the maximum power rating of the 2N1613 transistor?
A: The 2N1613 has a moderate power rating suitable for various electronic applications.

Q: Can the 2N1613 be used in audio amplifier circuits?
A: Yes, the 2N1613 is commonly used in audio amplification circuits for signal processing and amplification.

Equivalent

For similar functionalities, consider these alternatives to the 2N1613:

  • 2N2222: A versatile NPN transistor with similar characteristics to the 2N1613.
  • 2N3904: Another commonly used NPN transistor suitable for general-purpose applications.

2N1613

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Mfr Central Semiconductor Corp
Series - Package Bulk
Product Status Active Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max 3 W
Frequency - Transition 60MHz Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

NTMFS6H818NT1G

NTMFS6H818NT1G

80V NFET TRENCH 8
IRF740APBF

IRF740APBF

N-channel power MOSFET with a 400V voltage rating and 10A current capability
CM75TF-24H

CM75TF-24H

75A IGBT Module
IRF3415PBF

IRF3415PBF

43 amp current rating
FQT1N80TF-WS

FQT1N80TF-WS

N-Channel MOSFET with 800V, 0.2A, and 20Ohm specifications
2SC4027S-TL-E

2SC4027S-TL-E

NPN bipolar transistors for high voltage applications
NVMFD5C650NLWFT1G

NVMFD5C650NLWFT1G

Power MOSFET featuring two N-Channel transistors, each rated for 60V, 111A, and 4.2mΩ resistance
IPP051N15N5AKSA1

IPP051N15N5AKSA1

N-channel MOSFET, capable of handling up to 150V and 120A, presented in a TO-220-3 package, designated as IPP051N15N5AKSA1 by INFINEON
2SB1259

2SB1259

2SB1259: Power Bipolar Transistor with 10A Collector Current and 120V Collector-Emitter Breakdown Voltage
IRLIZ34NPBF

IRLIZ34NPBF

Ideal for various electronic applications requiring high power handling and switching capabilities