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ZTX690B

NPN transistor,ZTX690B 2A Ic 2Vce

Inventory:7,603

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  • Part Number : ZTX690B

  • Package/Case : TO-92-3

  • Brands : DIODES

  • Components Categories : Bipolar (BJT)Single Bipolar Transistors

  • Datesheet : ZTX690B DataSheet (PDF)

Quick Inquiry

Please submit RFQ for ZTX690B or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of ZTX690B

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:45V; Typ Gain Bandwidth ft:150MHz; Transistor Case Style:E-Line; No. of Pins:3; Case Style:E-Line; Current Ic @ Vce Sat:1A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:2A; Max Current Ic Continuous a:2A; Max Power Dissipation Ptot:1W; Max Voltage Vce Sat:0.5V; Min Gain Bandwidth ft:150MHz; Min Hfe:400; No. of Transistors:1; Power Dissipation:1W; Pulsed Current Icm:6A; Termination Type:Through Hole; Transistor Type:Bipolar; Voltage Vcbo:45V

Key Features

  • 45 Volt VCEO
  • Gain of 400 at IC=1 Amp
  • Very low saturation voltage

Application

  • Darlington replacement
  • Siren Drivers
  • Battery powered circuits
  • Motor drivers
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer ZETEX PLC Package Description IN-LINE, R-PSIP-W3
Reach Compliance Code not_compliant ECCN Code EAR99
Collector Current-Max (IC) 2 A Collector-Emitter Voltage-Max 45 V
Configuration SINGLE DC Current Gain-Min (hFE) 150
JESD-30 Code R-PSIP-W3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 200 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style IN-LINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form WIRE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 150 MHz VCEsat-Max 0.5 V

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