UF3C120040K4S

Name: UF3C120040K4S
Brand: Qorvo
Rating: 4.5 (10 reviews)

Switching Fast SiC FETs

Inventory:5,062

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N-Channel 1200 V 65A (Tc) 429W (Tc) Through Hole TO-247-4

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
Technology	SiC	Mounting Style	Through Hole
Package / Case	TO-247-4	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	65 A	Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	429 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	SiC FET	Series	UF3C
Brand	Qorvo	Configuration	Single
Fall Time	10 ns	Product Type	MOSFET
Rise Time	27 ns	Factory Pack Quantity	600
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	50 ns	Typical Turn-On Delay Time	24 ns
Unit Weight	0.211644 oz

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