TP0101K-T1-E3
TP0101K-T1-E3, P-channel MOSFET Transistor 0.58 A 20 V, 3-Pin TO-236
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Part Number : TP0101K-T1-E3
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Package/Case : SOT-23-3 (TO-236)
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Brands : VISHAY
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Components Categories : Single FETs, MOSFETs
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Datesheet : TP0101K-T1-E3 DataSheet (PDF)
Overview of TP0101K-T1-E3
MOSFET, P CH, 20V, 0.58A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-580mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.42ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:350mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C
Key Features
LOW THRESHOLDApplication
["Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories ", "Battery Operated Systems, DC/DC Converters ", "Power Supply Converter Circuits ", "Load/Power Switching-Cell Phones, Pagers"]Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Obsolete | Ihs Manufacturer | VISHAY SILICONIX |
| Part Package Code | SOT-23 | Package Description | SMALL OUTLINE, R-PDSO-G3 |
| Pin Count | 3 | Reach Compliance Code | |
| ECCN Code | EAR99 | Samacsys Manufacturer | Vishay |
| Additional Feature | LOW THRESHOLD | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 V | Drain Current-Max (Abs) (ID) | 0.58 A |
| Drain Current-Max (ID) | 0.58 A | Drain-source On Resistance-Max | 0.65 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.35 W | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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