SUM110P06-07L-E3
Power Field-Effect Transistor, 110A I(D), 60V, 0.0069ohm
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.439 | $2.44 |
10 | $2.321 | $23.21 |
30 | $2.250 | $67.50 |
100 | $2.179 | $217.90 |
500 | $1.907 | $953.50 |
800 | $1.892 | $1,513.60 |
Inventory:6,008
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Part Number : SUM110P06-07L-E3
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Package/Case : D2PAK-3 (TO-263-3)
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SUM110P06-07L-E3 DataSheet (PDF)
The SUM110P06-07L-E3 is a Power MOSFET transistor designed for high power switching applications. It features a low on-resistance and high current capability, making it suitable for power management tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SUM110P06-07L-E3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SUM110P06-07L-E3 datasheet. Functionality The SUM110P06-07L-E3 MOSFET is designed for power switching applications where low on-resistance and high current handling are essential for efficient power management. Usage Guide Q: Can the SUM110P06-07L-E3 be used for high-frequency switching applications? For similar functionalities, consider these alternatives to the SUM110P06-07L-E3:Overview of SUM110P06-07L-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SUM110P06-07L-E3 MOSFET is suitable for high-frequency switching due to its fast switching speed.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 110 A |
Rds On - Drain-Source Resistance | 6.9 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 230 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 375 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SUM |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 50 ns | Forward Transconductance - Min | 20 S |
Product Type | MOSFET | Rise Time | 25 ns |
Factory Pack Quantity | 800 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 110 ns |
Typical Turn-On Delay Time | 20 ns | Part # Aliases | SUM110P06-07L |
Unit Weight | 0.139332 oz |
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