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STP4N80K5

MOSFET N-CH 800V 2.1Ohm 3A Zener-protected

Inventory:6,490

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  • Part Number : STP4N80K5

  • Package/Case : TO-220

  • Brands : STMicroelectronics

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : STP4N80K5 DataSheet (PDF)

Quick Inquiry

Please submit RFQ for STP4N80K5 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of STP4N80K5

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Industry’s lowest RDS(on)x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 800 V Id - Continuous Drain Current 3 A
Rds On - Drain-Source Resistance 2.1 Ohms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 10.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 60 W Channel Mode Enhancement
Tradename MDmesh Series STP4N80K5
Brand STMicroelectronics Configuration Single
Fall Time 21 ns Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 36 ns Typical Turn-On Delay Time 16.5 ns
Unit Weight 0.068784 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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