STB47N60DM6AG
Trans MOSFET N-CH 600V 36A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Inventory:9,039
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : STB47N60DM6AG
-
Package/Case : D2PAK-3
-
Brands : STMicroelectronics
-
Components Categories : Single FETs, MOSFETs
-
Datesheet : STB47N60DM6AG DataSheet (PDF)
Overview of STB47N60DM6AG
The STB47N60DM6AG is a high-voltage N-channel Power MOSFET, designed as part of the MDmesh™ DM6 fast recovery diode series. This cutting-edge technology offers a significant improvement over previous generations, with very low recovery charge (Qrr) and recovery time (trr), as well as excellent enhancement in RDS(on) per area. These advancements make it an ideal choice for demanding high-efficiency bridge topologies and ZVS phase-shift converters. The effective switching behavior of the STB47N60DM6AG sets it apart in the market, ensuring optimal performance in power applications where efficiency is paramount
Key Features
- AEC-Q101 qualified
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | STMicroelectronics | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | D2PAK-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 36 A |
| Rds On - Drain-Source Resistance | 80 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 55 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 250 W | Channel Mode | Enhancement |
| Qualification | AEC-Q101 | Tradename | MDmesh |
| Series | STB47N60DM6AG | Brand | STMicroelectronics |
| Configuration | Single | Fall Time | 9 ns |
| Product Type | MOSFET | Rise Time | 5.5 ns |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 57 ns |
| Typical Turn-On Delay Time | 23 ns | Unit Weight | 0.048678 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
STB80NF10T4
High-Power N-Channel MOSFET with Low On-Resistance
STN2NF10
SOT-223 N-Channel MOSFET
STP30NF20
N-channel 200V, 0.065 Ohm, 30A, TO-220 STripFET(TM) Power MOSFET
STS4DNF60L
With a design optimized for dual N-channel operation
STD10NF10T4
STripFET II technology utilized in a 13 A rated Power MOSFET with 100 V voltage capability
STP24NF10
This TO-220 packaged STP24NF10 MOSFET transistor has a 26A current handling capability and a maximum voltage of 100V
KST10MTF
23 Transistor NPN 25V 350mW RF BJT
STE26NA90
N-Channel 900 V 26A (Tc) 450W (Tc) Chassis Mount ISOTOP®