ST13007D
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
Inventory:6,907
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : ST13007D
-
Package/Case : TO-220-3
-
Brands : STMicroelectronics
-
Components Categories : Single Bipolar Transistors
-
Datesheet : ST13007D DataSheet (PDF)
Overview of ST13007D
The ST13007D is a cutting-edge product that showcases the latest in high voltage Multi Epitaxial Planar technology. With its impressive high switching speeds and high voltage capability, this device is a game-changer in the world of electronics. The Cellular Emitter structure utilized in this product further enhances its already impressive switching speeds, making it a top choice for professionals and enthusiasts alike. Whether you're working on a personal project or a professional endeavor, the ST13007D is sure to meet and exceed your expectations
Key Features
- FULLY CHARACTERIZED AT 125 °C
- VERY HIGH SWITCHING SPEED
- IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE
- INTEGRATED FREE-WHEELING DIODE
- HIGH VOLTAGE CAPABILITY
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- LARGE RBSOA
- LOW SPREAD OF DYNAMIC PARAMETERS
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | STMicroelectronics | Product Category | Bipolar Transistors - BJT |
| RoHS | Details | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Transistor Polarity | NPN |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 400 V |
| Collector- Base Voltage VCBO | - | Emitter- Base Voltage VEBO | 9 V |
| Collector-Emitter Saturation Voltage | 2 V | Maximum DC Collector Current | 8 A |
| Pd - Power Dissipation | 80 W | Gain Bandwidth Product fT | - |
| Minimum Operating Temperature | - | Maximum Operating Temperature | + 150 C |
| Series | ST13007D | Brand | STMicroelectronics |
| Continuous Collector Current | 8 A | DC Collector/Base Gain hfe Min | 18 at 2 A, 5 V, 8 at 5 A, 5 V |
| Height | 15.75 mm | Length | 10.4 mm |
| Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1000 |
| Subcategory | Transistors | Technology | Si |
| Width | 4.6 mm | Unit Weight | 0.070548 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
STB80NF10T4
High-Power N-Channel MOSFET with Low On-Resistance
STN2NF10
SOT-223 N-Channel MOSFET
STP30NF20
N-channel 200V, 0.065 Ohm, 30A, TO-220 STripFET(TM) Power MOSFET
STS4DNF60L
With a design optimized for dual N-channel operation
STD10NF10T4
STripFET II technology utilized in a 13 A rated Power MOSFET with 100 V voltage capability
STP24NF10
This TO-220 packaged STP24NF10 MOSFET transistor has a 26A current handling capability and a maximum voltage of 100V
KST10MTF
23 Transistor NPN 25V 350mW RF BJT
STE26NA90
N-Channel 900 V 26A (Tc) 450W (Tc) Chassis Mount ISOTOP®