• SQD50P06-15L_GE3 DPAK-3 (TO-252-3)
SQD50P06-15L_GE3 DPAK-3 (TO-252-3)

SQD50P06-15L_GE3

SQD50P06-15L_GE3 is an automotive-grade P-Channel MOSFET designed to operate at high temperatures

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Overview of SQD50P06-15L_GE3

The SQD50P06-15L_GE3 is a power MOSFET transistor designed for high-power switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 50A, making it suitable for a wide range of power control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SQD50P06-15L_GE3 MOSFET for a visual representation.

Key Features

  • High Power Handling Capability: With a 50A continuous drain current, the SQD50P06-15L_GE3 can handle high-power applications effectively.
  • Low On-Resistance: The MOSFET offers low on-resistance for efficient power switching and reduced heat dissipation.
  • High Voltage Rating: The 60V drain-source voltage rating allows for compatibility with various power supply configurations.
  • Fast Switching Speed: The SQD50P06-15L_GE3 provides fast switching characteristics, ideal for applications requiring quick response times.
  • Enhanced Thermal Performance: Designed to facilitate heat dissipation and ensure reliable operation under high load conditions.

Note: For detailed technical specifications, please refer to the SQD50P06-15L_GE3 datasheet.

Application

  • Motor Control: Suitable for controlling high-power motors and actuators.
  • Power Supplies: Used in power supply units for efficient voltage regulation and switching.
  • Inverters: Ideal for inverter circuits in power electronic systems.

Functionality

The SQD50P06-15L_GE3 MOSFET is designed to efficiently switch high currents and voltages in power control applications, offering reliable performance and robust operation.

Usage Guide

  • Gate Voltage: Apply the appropriate voltage to the gate terminal for turning the MOSFET on and off.
  • Drain and Source Connections: Connect the load between the drain and source terminals for power control.
  • Heat Dissipation: Ensure proper heat sinking to maintain optimal operating temperatures during high-power operation.

Frequently Asked Questions

Q: What is the maximum drain-source voltage supported by the SQD50P06-15L_GE3?
A: The SQD50P06-15L_GE3 has a maximum drain-source voltage rating of 60V.

Q: Can the SQD50P06-15L_GE3 be used for high-current applications?
A: Yes, the SQD50P06-15L_GE3 is designed to handle continuous drain currents up to 50A, making it suitable for high-power applications.

Equivalent

For similar functionalities, consider these alternatives to the SQD50P06-15L_GE3:

  • IRF840: A power MOSFET with comparable specifications and performance characteristics.
  • FQP50N06: This MOSFET offers similar power handling capabilities and voltage ratings.

SQD50P06-15L_GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 13.5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 150 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 136 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename TrenchFET
Series SQ Brand Vishay / Siliconix
Configuration Single Fall Time 39 ns
Forward Transconductance - Min 50 S Height 2.38 mm
Length 6.73 mm Product Type MOSFET
Rise Time 12 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 112 ns Typical Turn-On Delay Time 15 ns
Width 6.22 mm Unit Weight 0.011640 oz

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