SQD50P06-15L_GE3
SQD50P06-15L_GE3 is an automotive-grade P-Channel MOSFET designed to operate at high temperatures
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Part Number : SQD50P06-15L_GE3
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Package/Case : DPAK-3 (TO-252-3)
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Brands : Vishay
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Components Categories : Single FETs, MOSFETs
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Datesheet : SQD50P06-15L_GE3 DataSheet (PDF)
The SQD50P06-15L_GE3 is a power MOSFET transistor designed for high-power switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 50A, making it suitable for a wide range of power control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SQD50P06-15L_GE3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SQD50P06-15L_GE3 datasheet. Functionality The SQD50P06-15L_GE3 MOSFET is designed to efficiently switch high currents and voltages in power control applications, offering reliable performance and robust operation. Usage Guide Q: What is the maximum drain-source voltage supported by the SQD50P06-15L_GE3? Q: Can the SQD50P06-15L_GE3 be used for high-current applications? For similar functionalities, consider these alternatives to the SQD50P06-15L_GE3:Overview of SQD50P06-15L_GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SQD50P06-15L_GE3 has a maximum drain-source voltage rating of 60V.
A: Yes, the SQD50P06-15L_GE3 is designed to handle continuous drain currents up to 50A, making it suitable for high-power applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | DPAK-3 (TO-252-3) |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 50 A |
Rds On - Drain-Source Resistance | 13.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 150 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 136 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | TrenchFET |
Series | SQ | Brand | Vishay / Siliconix |
Configuration | Single | Fall Time | 39 ns |
Forward Transconductance - Min | 50 S | Height | 2.38 mm |
Length | 6.73 mm | Product Type | MOSFET |
Rise Time | 12 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 112 ns | Typical Turn-On Delay Time | 15 ns |
Width | 6.22 mm | Unit Weight | 0.011640 oz |
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