SPA11N65C3
Infineon SPA11N65C3 N-channel MOSFET Transistor, 11 A, 650 V, 3+Tab-Pin TO-220FP
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $2.977 | $2.98 |
| 10 | $2.596 | $25.96 |
| 50 | $2.370 | $118.50 |
| 100 | $2.140 | $214.00 |
| 500 | $2.034 | $1,017.00 |
| 1000 | $1.987 | $1,987.00 |
Inventory:3,724
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Part Number : SPA11N65C3
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Package/Case : TO-220FP-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : SPA11N65C3 DataSheet (PDF)
Overview of SPA11N65C3
Meet the SPA11N65C3, a cutting-edge Power Field-Effect Transistor engineered for high-speed switching and power amplification tasks. Featuring a single N-Channel design and Metal-oxide Semiconductor technology, this robust MOSFET delivers exceptional performance with a low on-resistance of 0.38ohm and maximum reliability. The TO-220AB package ensures easy integration into existing circuit designs, while the green plastic housing adds a touch of environmental consciousness to the component. Whether used in consumer electronics or industrial machinery, the SPA11N65C3's 3-pin TO-220FP setup provides a versatile solution for diverse application requirements
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | SPA11N65C3 | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Not Recommended |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-220AB |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | Infineon | Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 340 mJ | Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
| Drain Current-Max (Abs) (ID) | 11 A | Drain Current-Max (ID) | 11 A |
| Drain-source On Resistance-Max | 0.38 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 33 W |
| Pulsed Drain Current-Max (IDM) | 33 A | Qualification Status | Not Qualified |
| Surface Mount | NO | Terminal Finish | TIN |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220FP-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 11 A |
| Rds On - Drain-Source Resistance | 380 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.9 V | Qg - Gate Charge | 45 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 33 W | Channel Mode | Enhancement |
| Tradename | CoolMOS | Series | CoolMOS C3 |
| Brand | Infineon Technologies | Fall Time | 5 ns |
| Height | 16.15 mm | Length | 10.65 mm |
| Product Type | MOSFET | Rise Time | 5 ns |
| Factory Pack Quantity | 500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 44 ns |
| Typical Turn-On Delay Time | 10 ns | Width | 4.85 mm |
| Part # Aliases | SPA11N65C3XK SP000216318 SPA11N65C3XKSA1 | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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