SPA03N60C3
SPA03N60C3 N-Channel MOSFET Transistor, 3.2 A, 650 V, 3-Pin TO-220 Infineon
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Part Number : SPA03N60C3
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Package/Case : TO-220FP-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : SPA03N60C3 DataSheet (PDF)
Overview of SPA03N60C3
The SPA03N60C3 is the silicon carbide power MOSFET from Infineon Technologies that is setting new standards for high voltage and high-frequency applications in power supplies, motor drives, and industrial equipment. With a drain-source voltage rating of 600V and a continuous drain current of 3A, this MOSFET offers exceptional performance in demanding environments. Its low on-resistance of 3 ohms reduces power dissipation and improves efficiency, making it an ideal choice for energy-conscious applications. Housed in a TO-220 package, the SPA03N60C3 provides excellent thermal performance and ease of installation, ensuring seamless integration into various designs
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | SPA03N60C3 | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Infineon | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 100 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (Abs) (ID) | 2.8 A | Drain Current-Max (ID) | 3.2 A |
Drain-source On Resistance-Max | 1.4 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 29.7 W |
Pulsed Drain Current-Max (IDM) | 9.6 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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