SCT3040KLGC11
ROHM - SCT3040KLGC11 - Silicon Carbide Power MOSFET, N Channel, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
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Part Number : SCT3040KLGC11
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Package/Case : TO-247N
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Brands : ROHM
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Components Categories : Single FETs, MOSFETs
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Datesheet : SCT3040KLGC11 DataSheet (PDF)
Overview of SCT3040KLGC11
The SCT3040KLGC11 power MOSFET transistor is a powerhouse when it comes to high power applications. With a VDS of 40V and a continuous drain current of 30A, this transistor is built to handle even the most demanding electronic circuits. Its low on-resistance of 4.4 mΩ ensures efficient power handling and minimal power loss, making it a top choice for power electronics applications
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ROHM CO LTD |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Factory Lead Time | 53 Weeks, 1 Day |
| Date Of Intro | 2017-03-13 | Samacsys Manufacturer | ROHM Semiconductor |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 1200 V |
| Drain Current-Max (ID) | 55 A | Drain-source On Resistance-Max | 0.052 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 265 | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 137 A | Surface Mount | NO |
| Terminal Finish | TIN | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON CARBIDE |
Warranty & Returns
Warranty, Returns, and Additional Information
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