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SCT10N120

MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm

Inventory:5,805

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Overview of SCT10N120

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key Features

  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid SCT10N120 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Manufacturer Package Code HiP247 IN LINE
Reach Compliance Code compliant Factory Lead Time 45 Weeks
Samacsys Manufacturer STMicroelectronics

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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