RS1G120MNTB
N-Channel 40 V 12A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP
Inventory:6,670
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Part Number : RS1G120MNTB
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Package/Case : HSOP-8
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Brands : Rohm Semiconductor
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Components Categories : Single FETs, MOSFETs
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Datesheet : RS1G120MNTB DataSheet (PDF)
Overview of RS1G120MNTB
Power Field-Effect Transistor, 12A I(D), 40V, 0.0207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | FET Type | N-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 16.2mOhm @ 12A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 20 V | Power Dissipation (Max) | 3W (Ta), 25W (Tc) |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | 8-HSOP | Package / Case | HSOP-8 |
Base Product Number | RS1G | Manufacturer | ROHM Semiconductor |
Product Category | MOSFET | RoHS | Details |
REACH | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 12 A |
Rds On - Drain-Source Resistance | 20.7 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 9.4 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 25 W | Channel Mode | Enhancement |
Brand | ROHM Semiconductor | Configuration | Single |
Fall Time | 3.2 ns | Forward Transconductance - Min | 4 S |
Height | 1.1 mm | Length | 5.8 mm |
Product | MOSFETs | Product Type | MOSFET |
Rise Time | 4.3 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-channel |
Type | Power MOSFET | Typical Turn-Off Delay Time | 23.8 ns |
Typical Turn-On Delay Time | 9.7 ns | Width | 5 mm |
Part # Aliases | RS1G120MN | Unit Weight | 0.027197 oz |
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Warranty, Returns, and Additional Information
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Returns for refund: within 90 days
Returns for Exchange: within 90 days
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